M1AFS250-1FG256I vs M1AFS250-2FGG256I Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng M1AFS250-1FG256I sa pamamagitan ng Microchip Technology at M1AFS250-2FGG256I sa pamamagitan ng Microchip Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Microchip Technology
M1AFS250-1FG256I - 250K Gate Fusion FPGA, 114 I/O | Microchip
M1AFS250-1FG256I ✓ NakahandaMicrochip Technology
M1AFS250-2FGG256I - Fusion FPGA 250K Gates ARM Cortex-M1 | Microchip
M1AFS250-2FGG256I ✓ NakahandaPagsanggunian na paghahambing
| Parametro | M1AFS250-1FG256I | M1AFS250-2FGG256I |
|---|---|---|
| Brand | Microchip Technology | Microchip Technology |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Series | Fusion (M1 - with ARM Cortex-M1) | — |
| System Gates | 250000 gates | 250000 gates |
| D Flip-Flops (DFF) | 36864 | — |
| Total I/O | 114 | — |
| Core Supply Voltage | 1.5 V (1.425 V to 1.575 V) | 1.5 V |
| Configuration Type | Flash-based (live at power-up) | — |
| Embedded Processor | ARM Cortex-M1 soft core | ARM Cortex-M1 |
| Analog Features | Configurable analog blocks, clock generation and management | — |
| On-chip Memory | Flash memory blocks | — |
| Temperature na Operasyon | -40C to +85C (industrial, suffix I) | -40C to +85C (industrial, I grade) |
| Speed Grade | -1 | -2 |
| Packhaging | 256-LBGA (FBGA) | 256-ball FBGA (FGG256) |
| Package Dimensions | 17 mm x 17 mm x 1.2 mm height | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Supplier Device Package | 256-LBGA | — |
| Total RAM | [DATA_NEEDED: Total RAM bits] | — |
| Embedded Block RAM (eSRAM) | [DATA_NEEDED: eSRAM size] | — |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| Family | — | Actel Fusion (Mixed-Signal FPGA) |
| Registers (DFFs) | — | 36864 |
| User I/Os | — | 114 |
| Configuration Technology | — | Flash-based, nonvolatile |
| Process Technology | — | 130 nm, 7-layer metal CMOS |
| System Performance | — | Up to 350 MHz |
| Security | — | 128-bit Flash lock, AES decryption |
| Power-Up Behavior | — | Live at Power-Up (LAPU) |
| Tindminan RoHS | — | Compliant (FGG = Pb-free balls) |