M29W640GB70N3F vs M29W128GL70N3F Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng M29W640GB70N3F sa pamamagitan ng Micron Technology at M29W128GL70N3F sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
M29W128GL70N3F - 128Mbit Parallel NOR Flash 70ns | Micron
M29W128GL70N3F ✓ NakahandaPagsanggunian na paghahambing
| Parametro | M29W640GB70N3F | M29W128GL70N3F |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Obsolete | Aktibo |
| Uri ng Memory | NOR Flash, Parallel | NOR Flash |
| Density | 64 Mb (8 MB) | 128 Mbit |
| Organisasyon | x8 / x16 | 8M x16 / 16M x8 |
| Access Time | 70 ns | 70 ns |
| Volte ng Pagbibigay | 2.7 V to 3.6 V | [DATA_NEEDED: supply voltage range] |
| Temperature na Operasyon | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| Qualification | Automotive AEC-Q100 | — |
| Packhaging | 48-TSOP I | 56-TSOP |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Program/Erase Interface | Parallel command set with status polling | — |
| Block Architecture | Uniform block (GB variant) | — |
| Part Status | Obsolete | — |
| Tindminan RoHS | Compliant (per JLCPCB listing) | [DATA_NEEDED: RoHS status] |
| Endurance | [DATA_NEEDED: program/erase endurance cycles] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Read Current | [DATA_NEEDED: active read current] | — |
| Memory Format | — | FLASH - NOR |
| Interface | — | Parallel |
| Block Organization Variant | — | GL (boot-block) |
| Speed Grade Code | — | -70 |
| Package Finish Code | — | N3F (lead-free TSOP) |
| Programming Interface | — | Command-set parallel bus, embedded state machine |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL level] |