M29W800FB70N3E vs M29W400FB55N3E Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng M29W800FB70N3E sa pamamagitan ng Micron Technology at M29W400FB55N3E sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
M29W800FB70N3E - 8Mbit 3V Parallel NOR Flash 70ns | Micron
M29W800FB70N3E ✓ NakahandaMicron Technology
M29W400FB55N3E - 4Mb NOR Flash 55ns TSOP-48 | Micron Technology
M29W400FB55N3E ✓ NakahandaPagsanggunian na paghahambing
| Parametro | M29W800FB70N3E | M29W400FB55N3E |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | Memory ICs | EEPROM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | NOR Flash | NOR Flash (parallel) |
| Density | 8 Mbit (8388608 bits) | 4 Mbit (4194 kbits) |
| Organisasyon | 512K x 16 / 1M x 8 | 512K x 8 bit / 256K x 16 bit |
| Width ng Data Bus | x8/x16 (BYTE# selectable) | — |
| Access Time | 70 ns | 55 ns |
| Supply Voltage (VCC) | up to 3.6 V for program, erase and read | 2.7 V to 3.6 V |
| Programming Time | 10 us per byte/word (typical) | 10 us per byte/word typical |
| Memory Blocks | 19 blocks, 1 boot block (bottom - FB configuration) | — |
| Interface | Parallel | Parallel, 8-bit/16-bit (BYTE# selectable) |
| Temperature na Operasyon | -40C to +125C | -40C to +125C |
| Packhaging | 48-TSOP (12 x 20 mm), TSOP I | 48-TSOP I, 12 x 20 mm |
| Bilang ng Pin | 48 | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | RoHS compliant (plastic TSOP-48) | Compliant |
| Product Longevity Program | No | — |
| FBGA Code | N/A | — |
| Chipset Validation | N/A | — |
| Block Architecture | — | 19 memory blocks, 1 boot block (bottom, FB) |
| Boot Block Hardware Protection | — | Yes |
| Pins | — | 48 |
| Packaging | — | Tray |
| Speed Grades in Family | — | 55 ns, 70 ns |