M29W800FT70ZA3SF vs M29W064FT70N3F Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng M29W800FT70ZA3SF sa pamamagitan ng Micron Technology at M29W064FT70N3F sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
M29W800FT70ZA3SF - 8Mbit NOR Flash 70ns TFBGA48 | Micron
M29W800FT70ZA3SF ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | M29W800FT70ZA3SF | M29W064FT70N3F |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | NOR Flash | NOR Flash |
| Density | 8 Mbit | 64 Mbit |
| Interface | Parallel | Parallel |
| Access Time | 70 ns | 70 ns |
| Volte ng Pagbibigay | 2.7 V to 3.6 V | — |
| Temperature na Operasyon | -40C to +125C | -40C to +125C |
| Packhaging | 48-TFBGA (6 x 8 mm) | 48-TSOP I |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Boot Block Configuration | Top boot block (FT) | Top boot block (FT) |
| Memory Organization | [DATA_NEEDED: memory organization x8/x16] | — |
| Program/Erase Cycles | [DATA_NEEDED: endurance cycles] | — |
| Data Retention | [DATA_NEEDED: data retention years] | — |
| Active Read Current | [DATA_NEEDED: active read current] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Package Body Size | 6 x 8 mm | — |
| Ball Pitch | 0.80 mm | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | unknown |
| Organisasyon | — | 8 Mbit x8 / 4 Mbit x16 |
| Supply Voltage (VCC) | — | up to 3.6 V for program, erase, read |
| VPP Fast Program Voltage | — | 12 V (optional) |
| Programming Method | — | Command set / data polling / toggle bit |
| Block Protection | — | Yes, with temporary unprotection |
| Product Longevity Program | — | No |
| Width | — | x8/x16 |