MD7IC2050NBR1 vs MW7IC2040NR1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MD7IC2050NBR1 sa pamamagitan ng NXP Semiconductors at MW7IC2040NR1 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MD7IC2050NBR1 - 10W W-CDMA RF Power Amplifier 1880-2100MHz | NXP
MD7IC2050NBR1 ✓ NakahandaNXP Semiconductors
MW7IC2040NR1 - 4W RF LDMOS Wideband PA | NXP | Cellular BTS
MW7IC2040NR1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MD7IC2050NBR1 | MW7IC2040NR1 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | RF Amplifiers | RF Amplifiers |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| RF Type | W-CDMA | General Purpose / Wideband Integrated Power Amplifier |
| Frequency Range | 1.88 GHz to 2.1 GHz | — |
| Operating Bandwidth (broader usability) | 1750 MHz to 2050 MHz | — |
| Volte ng Pagbibigay | 28 V | — |
| Supply Current (quiescent) | 230 mA | — |
| Gain | 30.5 dB | — |
| Output Power (P3dB class, datasheet) | [DATA_NEEDED: P3dB output power] | — |
| Average Output Power (W-CDMA) | 10 W average | — |
| Architecture | Multi-stage RF LDMOS integrated power amplifier | — |
| Input Matching | On-chip, 50 ohm, DC blocked | — |
| Output Matching | On-chip, >5 ohm nominal | — |
| Enable / Disable | Integrated (with quiescent current temperature compensation) | — |
| ESD Protection | Integrated | — |
| Packhaging | TO-272 WB-14 (CASE 1618-02, plastic overmold) | — |
| Maximum Junction / Package Temperature | 225 C capable plastic | — |
| RoHS Compliance | Compliant (per manufacturer datasheet) | — |
| Uri ng Pagpapasok | Surface Mount (flanged lead) | Surface Mount (PCB solderable with bottom drain ground plane) |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | -40 C to +85 C (industrial base-station operating ambient; per Freescale/NXP LDMOS module family) |
| Manufacturer | — | NXP Semiconductors (formerly Freescale / Motorola Semiconductor) |
| Technology | — | RF LDMOS (Laterally Diffused MOSFET) |
| Fungsi | — | Two-stage integrated power amplifier with on-chip matching |
| Frequency Range (Application) | — | 1805 MHz to 1990 MHz (covers 1805-1880 MHz DCS/PCS and 1930-1990 MHz UMTS) |
| Frequency Range (Characterization) | — | 100 MHz to 1 GHz |
| Supply Voltage (Vdd) | — | 24 V to 32 V (nominal 28 V) |
| Maximum Supply Voltage | — | 32 V |
| Quiescent Supply Current (Idq) | — | 75 mA |
| Small-Signal Gain | — | 23.5 dB |
| Output Power (avg, W-CDMA) | — | 4 W (typical at rated operating conditions) |
| Modulation Compatibility | — | Single W-CDMA, GSM/EDGE, UMTS, LTE, all typical cellular BTS formats |
| Packhaging / Kaso | — | TO-270 WBL-16 (TO-270-16 Variant, Flat Leads), plastic over-mold surface-mount |
| Bilang ng Pin | — | 16 |
| Operating Mode | — | Class-AB (multi-stage, externally biased) |
| Lead Configuration | — | Flat leads (surface-mount) |
| Packaging Type | — | Tape & Reel (per part suffix NR1 suffix convention) |
| Tindminan RoHS | — | Compliant (per NXP product family) |