MPQ2222 vs MPQ2222-PBFREE Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng MPQ2222 sa pamamagitan ng Central Semiconductor at MPQ2222-PBFREE sa pamamagitan ng Central Semiconductor. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Central Semiconductor
MPQ2222 MPQ2222 - Quad NPN 40V 500mA Transistor Array | Central Semiconductor

MPQ2222 - Quad NPN 40V 500mA Transistor Array | Central Semiconductor

MPQ2222 ✓ Nakahanda
Central Semiconductor
MPQ2222-PBFREE MPQ2222-PBFREE - Quad NPN BJT Array 40V 500mA TO-116 | Central Semiconductor

MPQ2222-PBFREE - Quad NPN BJT Array 40V 500mA TO-116 | Central Semiconductor

MPQ2222-PBFREE ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro MPQ2222 MPQ2222-PBFREE
Brand Central Semiconductor Central Semiconductor
Kategorya Transistors Transistors
Katayuan ng Lifecycle Aktibo Aktibo
Configuration Quad NPN Transistor Array (4 independent devices) —
Transistor Polarity NPN Silicon —
Voltage ng Collector-Base (Vcbo) [DATA_NEEDED: VCBO exact value, typically 60 V class per 2N2222 family - verify in datasheet] 75 V
Collector-Emitter Voltage Rating 40 V —
Voltage ng Emitter-Base (Vebo) [DATA_NEEDED: VEBO exact value] 6 V
Continuous Collector Current (per device) 500 mA —
Dalas ng Transisyon (ft) 200 MHz 200 MHz
Power Dissipation (total package) 650 mW —
Power Dissipation (per transistor) [DATA_NEEDED: per-transistor dissipation value] —
DC Current Gain (hFE) [DATA_NEEDED: hFE min/typ, higher in MPQ2222A grade] [DATA_NEEDED: hFE min/max]
Operating and Storage Junction Temperature [DATA_NEEDED: exact TJ range from datasheet] —
Thermal Resistance (total package) [DATA_NEEDED: thermal resistance value] —
Packhaging 14-pin DIP (TO-116), Through Hole TO-116 (14-pin through-hole DIP)
Uri ng Pagpapasok Through Hole Through Hole
Marking Full part number —
Tindminan RoHS Lead-free (PB Free suffix version available) —
Uri ng Transistor — 4 NPN (Quad) BJT Array
Voltage ng Collector-Emitter (Vceo) — 40 V
Max Collector Current (IC) — 500 mA
Power Dissipation (Pd) — 650 mW
Number of Elements — 4
Polarity — NPN
Application — General Purpose Amplifier/Switch
Temperature na Operasyon — [DATA_NEEDED: operating temperature range]
Lead Free — Yes (PBFREE suffix)
Packaging — Tube
Product Status — Active

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