MPVZ5004G6T1 vs MPVZ5004GW7U Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MPVZ5004G6T1 sa pamamagitan ng NXP Semiconductors at MPVZ5004GW7U sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MPVZ5004G6T1 - 0-3.92kPa Vented Gauge Pressure Sensor | NXP
MPVZ5004G6T1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | MPVZ5004G6T1 | MPVZ5004GW7U |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | Pressure Sensors | Pressure Sensors |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 kPa to 3.92 kPa (0 to 0.57 PSI) | 0 kPa to 3.92 kPa (0 to 0.57 psi) |
| Maximum Over Pressure | [DATA_NEEDED: maximum over pressure] | — |
| Type ng Output | Analog Voltage | Analog voltage, ratiometric |
| Hanay ng Output Volte | 1 V to 4.9 V | — |
| Output Span | 3.9 V (typical at 5 V supply) | — |
| Volte ng Pagbibigay | 5 V typical (5 V max) | 5.0 V (typ) |
| Kuru-kuryente ng Pagbibigay | [DATA_NEEDED: supply current] | 4 mA typ (per datasheet family) |
| Sensitivity | 1 V/kPa (approx., ratiometric to Vsupply) | approx. 1.0 V / kPa |
| Accuracy | [DATA_NEEDED: accuracy %] | [DATA_NEEDED: linearity/error %] |
| Temperature na Operasyon | 0C to +85C (per Partstack) | 0 °C to 85 °C |
| Uri ng Pagpapasok | Surface Mount | Through-Hole (DIP module with tube port) |
| Packhaging | 8-SMD Module | 8-DIP Module (Case 1560-02) |
| Port Style | Vented Gauge (rear vent) | — |
| Tindminan RoHS | Compliant | [DATA_NEEDED: confirm from datasheet] |
| Pressure Port | — | Male 0.22" (5.59 mm) tube, single axial |
| Output Voltage Span | — | 1.0 V to 4.9 V (at 5 V excitation) |
| Output Voltage at 0 kPa | — | 1.0 V typ |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Technology | — | Piezoresistive MEMS, monolithic silicon |
| Signal Conditioning | — | On-chip amplifier, temperature-compensated, calibrated |
| Media Compatibility | — | Non-corrosive dry gases (air) |