MRF6S9160HR3 vs MRFE6S9160HR3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRF6S9160HR3 sa pamamagitan ng NXP Semiconductors at MRFE6S9160HR3 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MRF6S9160HR3 - 880MHz 35W RF Power MOSFET | NXP/Freescale
MRF6S9160HR3 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MRF6S9160HR3 | MRFE6S9160HR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Technology | RF Power MOSFET (lateral N-channel, enhancement mode) | HV6E lateral MOSFET (LDMOS-like) |
| Frequency Band | 880 MHz (single-band cellular UHF) | — |
| Operating Frequency Range | [DATA_NEEDED: full datasheet frequency range] | 865 MHz to 960 MHz |
| Drain-Source Voltage (VDSS) | [DATA_NEEDED: VDSS rating] | — |
| Supply Voltage (VDD) | 28 V (typical operation) | — |
| Average Output Power (Pout avg) | 35 W (N-CDMA, 880 MHz) | — |
| Peak Output Power (Pout peak) | [DATA_NEEDED: peak Pout rating] | — |
| Power Gain (Gp) | 20.9 dB (typical at 880 MHz) | — |
| Drain Efficiency (ηD) | [DATA_NEEDED: efficiency at rated Pout] | — |
| Quiescent Bias Current (IDQ) | 1.2 A (typical) | — |
| Packhaging / Kaso | NI-780H-2L (CASE 465-06, STYLE 1), ceramic, flanged | NI-780H-2L (ceramic/metal air-cavity flange-mount) |
| Uri ng Pagpapasok | Chassis/Surface flange mount (screw-down) | Chassis / Flange mount (through-hole RF leads) |
| Configuration | Single (single-ended, common-source) | — |
| Operating Mode | Enhancement mode, Class AB | — |
| Test Signal | Single N-CDMA | — |
| Maximum Power Dissipation | 565 W (absolute, per Partstack parametric record) | — |
| Lead Finish | [DATA_NEEDED: lead finish] | — |
| Tindminan RoHS | unknown | Compliant |
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) | NXP Semiconductors |
| Uri ng Transistor | — | N-Channel Enhancement-Mode Lateral MOSFET |
| Drain-Source Voltage (V DSS) | — | 70 V (max) |
| Drain Current (continuous) | — | [DATA_NEEDED: typical drain current at TC=25C] |
| Test Frequency | — | 880 MHz |
| Drain Supply Voltage (V DD) | — | 28 V (typical) |
| Output Power (Average) | — | 35 W (single-carrier N-CDMA, 880 MHz) |
| Output Power (PEP) | — | [DATA_NEEDED: PEP at specified conditions] |
| Power Gain (G ps / G p) | — | 21 dB (typical at 880 MHz) |
| Drain Efficiency | — | 32.4% (typical, N-CDMA, 880 MHz) |
| Hanay ng Temperature na Operasyon | — | -40C to +150C (junction) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Thermal Resistance (R thJC) | — | [DATA_NEEDED: thermal resistance junction-to-case] |
| Input Match | — | Internally matched input (broadband) |
| Lead-Free | — | Yes |
| Level ng MSL | — | Not applicable (non-SMD air-cavity package) |