MRF7S19100NBR1 vs MRF6S19100HR3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRF7S19100NBR1 sa pamamagitan ng NXP Semiconductors at MRF6S19100HR3 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MRF7S19100NBR1 - 29W 1.93-1.99GHz RF Power MOSFET | NXP
MRF7S19100NBR1 ✓ NakahandaNXP Semiconductors
MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP
MRF6S19100HR3 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MRF7S19100NBR1 | MRF6S19100HR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | MRF7S19100NBR1 | MRF6S19100HR3 |
| Device Type | RF Power MOSFET (N-Channel Enhancement-Mode Lateral) | RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET) |
| Frequency Band | 1.93 GHz to 1.99 GHz | — |
| Test Frequency (typical) | 1.96 GHz | — |
| Drain-Source Breakdown Voltage (V(BR)DSS, min) | 65 V | — |
| Drain Operating Voltage (VDD) | 28 V (nominal) | — |
| Quiescent Drain Current (IDQ) | 1000 mA | — |
| Output Power (Pout, average) | 29 W (single-carrier W-CDMA, 3GPP TM1 64 DPCH, 50% clipping) | — |
| Power Gain (Gp, typical) | 17.5 dB | — |
| Drain Efficiency (typical) | [DATA_NEEDED: typical drain efficiency %] | — |
| Packhaging / Kaso | TO-270 WB-4 (TO-272 WB-4), plastic over-molded, surface mount | NI-780H-2L (Case 465-06, Style 1) |
| Configuration | Single, N-Channel | — |
| Style ng Pagpapasok | Surface Mount with copper ground flange (heatsink bolted) | — |
| JEDEC Terminal Code | JESD-30: R-PDFM-F4 | — |
| Terminal Finish (JESD-609) | e3 (tin-lead reflow compatible per manufacturer data) | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: operating temperature range C] | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range C] | — |
| Tindminan RoHS | compliant (per NXP product page) | Compliant (per NXP product page) |
| Lead-Free | yes | — |
| Technology | — | N-Channel LDMOS |
| Operating Frequency Range | — | 1930 MHz to 1990 MHz |
| Output Power (P1dB, Avg) | — | 22 W (N-CDMA Average) |
| Power Gain | — | 16.1 dB (typical at 1.99 GHz) |
| Drain Voltage (Vds) | — | 28 V |
| Quiescent Drain Current (Idq) | — | 900 mA (typical) |
| Uri ng Pagpapasok | — | Flanged / Screw-mount with ceramic body |
| Lead Style | — | Dual blade (HR3 suffix) |
| Operating Mode | — | Class AB (linear) |
| Target Applications | — | N-CDMA base station, TDMA, CDMA, multicarrier amplifier, PCS/cellular radio, WLL |