MRF8P23080HSR5 vs MRF8P23080HSR3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRF8P23080HSR5 sa pamamagitan ng NXP Semiconductors at MRF8P23080HSR3 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MRF8P23080HSR5 - 80W RF MOSFET 2.3GHz W-CDMA/LTE | NXP
MRF8P23080HSR5 ✓ NakahandaNXP Semiconductors
MRF8P23080HSR3 - 80W 2300-2400MHz LDMOS RF Power MOSFET | NXP
MRF8P23080HSR3 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MRF8P23080HSR5 | MRF8P23080HSR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale Semiconductor) |
| Product Type | RF Power MOSFET (Lateral N-Channel) | — |
| Series | Airfast HV8 | — |
| Frequency Band | 2300 to 2400 MHz | — |
| Test Frequency | 2.3 GHz | — |
| Target Waveforms | W-CDMA, LTE | — |
| Average Output Power | 16 W | — |
| Peak Output Power | 80 W | — |
| Power Gain (typical) | 14.6 dB at 2.3 GHz | — |
| Drain-Source Voltage (Vds) Test Condition | 28 V | — |
| Drain Current (Id) Test Condition | 280 mA | — |
| Packhaging / Kaso | NI-780S-4L | NI-780S-4L (air-cavity ceramic, flange-mount) |
| Uri ng Pagpapasok | Chassis / Flange Mount | Chassis / flange-mount, bolt-down with screws |
| Operating Mode | Class AB | — |
| Technology | Laterally Diffused MOS (LDMOS) | — |
| Channel Polarity | N-Channel | — |
| Compliance | RoHS compliant per NXP product page | — |
| Uri ng Transistor | — | LDMOS (Dual), N-Channel Enhancement-Mode Lateral MOSFET |
| Drain-Source Voltage (V DSS) | — | 65 V |
| Drain Bias Voltage (V DD) | — | 28 V (typical operating) |
| Test Quiescent Current (I DQ) | — | 280 mA |
| Frequency Range | — | 2300 MHz to 2620 MHz |
| Center Test Frequency | — | 2.3 GHz |
| Typical Power Gain | — | 14.6 dB |
| Average Output Power (P3dB-class, single-carrier W-CDMA) | — | 16 W |
| Maximum Operating Temperature (Tj) | — | 225 C (junction) |
| Configuration | — | Common source, 2 elements |
| Lead-Free / RoHS | — | Lead-Free Status confirmed per DigiKey listing |
| Typical Modulation Formats | — | W-CDMA, LTE, TD-LTE; Class AB and Class C |
| Suggested Topology | — | Doherty final stage (single-carrier W-CDMA) |