MRF8P26080HSR3 vs MRF8P23080HSR5 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRF8P26080HSR3 sa pamamagitan ng NXP Semiconductors at MRF8P23080HSR5 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP
MRF8P26080HSR3 ✓ NakahandaNXP Semiconductors
MRF8P23080HSR5 - 80W RF MOSFET 2.3GHz W-CDMA/LTE | NXP
MRF8P23080HSR5 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MRF8P26080HSR3 | MRF8P23080HSR5 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | N-Channel Enhancement-Mode Lateral MOSFET | — |
| Technology | Gen8 LDMOS (Silicon, Lateral) | Laterally Diffused MOS (LDMOS) |
| Frequency Range | 2500 MHz to 2700 MHz | — |
| Average Output Power (P3dB) | 14 W (W-CDMA, single-carrier) | — |
| Peak Output Power (CW) | 80 W | — |
| Drain-Source Voltage (VDSS max) | 65 V | — |
| Operating Drain Voltage (VDD) | 28 V nominal | — |
| Test Mode | Typical Doherty Single-Carrier W-CDMA | — |
| Application Class | Class AB or Class C capable | — |
| Modulation Formats | W-CDMA, LTE, OFDM, multi-carrier | — |
| Packhaging | NI-780S-4 (ceramic, flange-mount, air-cavity) | — |
| Uri ng Pagpapasok | Through-hole flange-mount with screw attachment | Chassis / Flange Mount |
| Lead Finish | Gold-plated (NiPdAu) | — |
| Lead-Free / RoHS | Compliant | — |
| Hanay ng Temperature na Operasyon | -40C to +150C (junction) | — |
| Manufacturer | — | NXP Semiconductors |
| Product Type | — | RF Power MOSFET (Lateral N-Channel) |
| Series | — | Airfast HV8 |
| Frequency Band | — | 2300 to 2400 MHz |
| Test Frequency | — | 2.3 GHz |
| Target Waveforms | — | W-CDMA, LTE |
| Average Output Power | — | 16 W |
| Peak Output Power | — | 80 W |
| Power Gain (typical) | — | 14.6 dB at 2.3 GHz |
| Drain-Source Voltage (Vds) Test Condition | — | 28 V |
| Drain Current (Id) Test Condition | — | 280 mA |
| Packhaging / Kaso | — | NI-780S-4L |
| Operating Mode | — | Class AB |
| Channel Polarity | — | N-Channel |
| Compliance | — | RoHS compliant per NXP product page |