MRF8S18120HR3 vs MRF6S19100HR3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRF8S18120HR3 sa pamamagitan ng NXP Semiconductors at MRF6S19100HR3 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MRF8S18120HR3 - 1.8GHz 72W CW LDMOS RF Power Transistor | NXP
MRF8S18120HR3 ✓ NakahandaNXP Semiconductors
MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP
MRF6S19100HR3 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MRF8S18120HR3 | MRF6S19100HR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | MRF8S18120HR3 | MRF6S19100HR3 |
| Uri ng Transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | — |
| Frequency Range | 1805 to 1880 MHz | — |
| Output Power (CW) | 72 W | — |
| Power Gain (typ) | 18.2 dB at 1.81 GHz | — |
| Drain-Source Voltage (Rated) | 65 V | — |
| Test Drain Voltage (Vdd) | 28 V | — |
| Test Quiescent Current (Idq) | 800 mA | — |
| Drain Current Rating | 10 uA (leakage spec entry per datasheet) | — |
| Operating Mode | Class AB, Class C | Class AB (linear) |
| Packhaging | NI-780H (3-pin ceramic, flangeless) | — |
| Uri ng Pagpapasok | Surface Mount / Screw-down heatsink | Flanged / Screw-mount with ceramic body |
| Target Application | GSM, GSM EDGE base station PA | — |
| Tindminan RoHS | Compliant per NXP product page | Compliant (per NXP product page) |
| Device Type | — | RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET) |
| Technology | — | N-Channel LDMOS |
| Operating Frequency Range | — | 1930 MHz to 1990 MHz |
| Output Power (P1dB, Avg) | — | 22 W (N-CDMA Average) |
| Power Gain | — | 16.1 dB (typical at 1.99 GHz) |
| Drain Voltage (Vds) | — | 28 V |
| Quiescent Drain Current (Idq) | — | 900 mA (typical) |
| Packhaging / Kaso | — | NI-780H-2L (Case 465-06, Style 1) |
| Lead Style | — | Dual blade (HR3 suffix) |
| Target Applications | — | N-CDMA base station, TDMA, CDMA, multicarrier amplifier, PCS/cellular radio, WLL |