MRF8S18120HR3 vs MRF6S19100HR3 比較
詳細並排比較 MRF8S18120HR3 由 NXP Semiconductors 與 MRF6S19100HR3 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
NXP Semiconductors
MRF8S18120HR3 - 1.8GHz 72W CW LDMOS RF Power Transistor | NXP
MRF8S18120HR3 ✓ 啟用中NXP Semiconductors
MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP
MRF6S19100HR3 ✓ 啟用中規格比較
| 參數 | MRF8S18120HR3 | MRF6S19100HR3 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | MRF8S18120HR3 | MRF6S19100HR3 |
| 電晶體類型 | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | — |
| Frequency Range | 1805 to 1880 MHz | — |
| Output Power (CW) | 72 W | — |
| Power Gain (typ) | 18.2 dB at 1.81 GHz | — |
| Drain-Source Voltage (Rated) | 65 V | — |
| Test Drain Voltage (Vdd) | 28 V | — |
| Test Quiescent Current (Idq) | 800 mA | — |
| Drain Current Rating | 10 uA (leakage spec entry per datasheet) | — |
| Operating Mode | Class AB, Class C | Class AB (linear) |
| 封裝 | NI-780H (3-pin ceramic, flangeless) | — |
| 安裝類型 | Surface Mount / Screw-down heatsink | Flanged / Screw-mount with ceramic body |
| Target Application | GSM, GSM EDGE base station PA | — |
| RoHS 狀態 | Compliant per NXP product page | Compliant (per NXP product page) |
| Device Type | — | RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET) |
| Technology | — | N-Channel LDMOS |
| Operating Frequency Range | — | 1930 MHz to 1990 MHz |
| Output Power (P1dB, Avg) | — | 22 W (N-CDMA Average) |
| Power Gain | — | 16.1 dB (typical at 1.99 GHz) |
| Drain Voltage (Vds) | — | 28 V |
| Quiescent Drain Current (Idq) | — | 900 mA (typical) |
| 封裝 / 外殼 | — | NI-780H-2L (Case 465-06, Style 1) |
| Lead Style | — | Dual blade (HR3 suffix) |
| Target Applications | — | N-CDMA base station, TDMA, CDMA, multicarrier amplifier, PCS/cellular radio, WLL |