MRF8S21100HSR3 vs MRF8S21120HSR3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRF8S21100HSR3 sa pamamagitan ng NXP Semiconductors at MRF8S21120HSR3 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MRF8S21100HSR3 - 100W RF Power MOSFET, 2.11-2.17 GHz | NXP
MRF8S21100HSR3 ✓ NakahandaNXP Semiconductors
MRF8S21120HSR3 - 28W RF Power MOSFET 2110-2170 MHz | NXP
MRF8S21120HSR3 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MRF8S21100HSR3 | MRF8S21120HSR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | N-Channel Enhancement-Mode Lateral MOSFET | — |
| Technology | LDMOS (Laterally Diffused MOSFET) | — |
| Drain-Source Voltage (V(BR)DSS) | 65 V | — |
| Operating Drain Voltage (VDD) | 28 V nominal | — |
| Frequency Range | 2110 MHz to 2170 MHz | 2110-2170 MHz |
| Test Frequency | 2.14 GHz | — |
| Output Power (CW, typical) | 100 W | — |
| Average Output Power (W-CDMA) | 24 W | — |
| Power Gain (typ) | 18.3 dB at 2.14 GHz | — |
| Drain Current (ID, max) | [DATA_NEEDED: max ID rating] | — |
| Packhaging / Kaso | NI-780S (Case 465A-06), 3-pin ceramic flange | — |
| Configuration | Single, push-pull N/A | — |
| Uri ng Pagpapasok | Chassis / flange mount, screw-down | — |
| Operating Class | Class AB or Class C | — |
| Application | W-CDMA, LTE base-station power amplifiers | — |
| Tindminan RoHS | Compliant (per NXP product family) | RoHS compliant |
| Lead-Free | Yes | Yes |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Number | — | MRF8S21120HSR3 |
| Device Type | — | N-Channel Enhancement-Mode Lateral RF Power MOSFET |
| Output Power (P1dB / average) | — | 28 W average, W-CDMA / LTE |
| Drain-Source Breakdown Voltage V(BR)DSS | — | 65 V |
| Operating Drain Voltage | — | 28 V |
| Power Gain (Typical) | — | 17.6 dB at 2.17 GHz |
| Drain Efficiency (Typical) | — | [DATA_NEEDED: datasheet efficiency figure] |
| Operating Mode | — | Class AB / Class C |
| Package Type | — | NI-780HS (ceramic flange) |
| Case Mounting | — | Source on case (flange grounding) |
| Bilang ng Pins | — | 2-pin (Gate, Drain) |
| Style ng Pagpapasok | — | Through-hole / bolt-down flange |
| Level ng MSL | — | 1 (unlimited) |