MT40A512M16LY-062E AAT:E vs MT40A512M16JY-083E Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT40A512M16LY-062E AAT:E sa pamamagitan ng Micron Technology at MT40A512M16JY-083E sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT40A512M16LY-062E AAT:E - 8Gbit DDR4 SDRAM 1.6GHz | Micron
MT40A512M16LY-062E AAT:E ✓ NakahandaMicron Technology
MT40A512M16JY-083E - 8Gb DDR4 SDRAM 2400MT/s x16 | Micron
MT40A512M16JY-083E ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MT40A512M16LY-062E AAT:E | MT40A512M16JY-083E |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | Memory ICs | DRAM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM (Automotive) |
| Laki ng Memory | 8 Gbit (1 GB) | — |
| Memory Organization | 512M x 16 | — |
| Interface | Parallel | — |
| Clock Frequency | 1.6 GHz | 1.2 GHz (tCK = 0.83 ns) |
| Access Time | 19 ns | — |
| Volte ng Pagbibigay | 1.2 V | — |
| Speed Grade | 062E | — |
| Packhaging | 96-FBGA (7.5 x 13.5 mm) | 96-FBGA (8 x 14 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | — |
| Package Height | [DATA_NEEDED: package max height] | — |
| MSL Rating | [DATA_NEEDED: moisture sensitivity level] | — |
| Ordering Code Suffix | AAT:E (temperature/package option per Micron code) | — |
| Tindminan RoHS | Compliant | — |
| Moisture Packaging | [DATA_NEEDED: packing type for AAT:E suffix] | — |
| Data Rate Class | DDR4-3200 (062E speed bin) | — |
| Density | — | 8 Gbit |
| Organisasyon | — | 512M x 16 |
| Rate ng Data | — | 2400 MT/s (speed grade -083E) |
| VDD Supply Voltage | — | 1.2 V +/- 60 mV |
| VDDQ Supply Voltage | — | 1.2 V +/- 60 mV |
| VPP Supply Voltage | — | 2.5 V, -125 mV, +250 mV |
| I/O Interface | — | 1.2 V pseudo open-drain |
| VREFDQ | — | On-die internal adjustable generation |
| Refresh Structure | — | 8192-cycle refresh |
| Refresh Window | — | 64 ms at -40C to 85C; 32 ms at >85C to 95C; 16 ms at >95C |
| ECCN | — | EAR99 |
| Wala sa Halogen | — | Compliant |
| Country of Origin | — | China |