MT40A512M8RH-075E:B vs K4A4G085WD-BCTD Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT40A512M8RH-075E:B sa pamamagitan ng Micron Technology at K4A4G085WD-BCTD sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT40A512M8RH-075E:B - DDR4 4Gb 2666 MT/s SDRAM | Micron
MT40A512M8RH-075E:B ✓ NakahandaSamsung Electronics
K4A4G085WD-BCTD - 4Gb DDR4 SDRAM 512Mx8 2666Mbps | Samsung
K4A4G085WD-BCTD ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MT40A512M8RH-075E:B | K4A4G085WD-BCTD |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gb |
| Organisasyon | 512M x 8 | 512M x 8 |
| Rate ng Data | 2666 MT/s (DDR4-2666) | 2666 Mbps/pin |
| Clock Frequency | 1333 MHz (1.33 GHz) | — |
| VDD Supply Voltage | 1.2 V +/-60 mV | — |
| VDDQ Supply Voltage | 1.2 V +/-60 mV | — |
| VPP Supply Voltage | 2.5 V, -125 mV/+250 mV | — |
| Uri ng Interface | Parallel | — |
| I/O Structure | 1.2V pseudo open-drain | — |
| Tingnan ang Volte | On-die internal adjustable VREFDQ generation | — |
| Packhaging | 78-FBGA (9 x 10.5 mm), TFBGA | 78-ball FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range (standard grade)] | 0C to +85C |
| Refresh | Refresh max interval extension at extended TC temperature range (125C capable per family features) | — |
| Speed Grade Suffix | -075E | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| Packaging Option Suffix | :B (ball map B designation per Mouser listing) | — |
| Die Generation | — | D-die |
| Volte ng Pagbibigay | — | 1.2 V |
| Ball Pitch | — | 0.8 mm |
| Interface | — | DDR4 (JEDEC-compatible) |
| Speed Class | — | DDR4-2666 (PC4-21300) |
| Bank Architecture | — | DDR4 bank-group architecture |
| On-Die Termination (ODT) | — | Yes |
| DLL | — | Yes |
| Level ng MSL | — | [DATA_NEEDED: moisture sensitivity level] |