MT40A512M8RH-075E:B vs MT40A512M8RH-083E Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT40A512M8RH-075E:B sa pamamagitan ng Micron Technology at MT40A512M8RH-083E sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT40A512M8RH-075E:B - DDR4 4Gb 2666 MT/s SDRAM | Micron
MT40A512M8RH-075E:B ✓ NakahandaMicron Technology
MT40A512M8RH-083E - 4Gb DDR4 512Mx8 2400MHz | Micron
MT40A512M8RH-083E ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MT40A512M8RH-075E:B | MT40A512M8RH-083E |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| Organisasyon | 512M x 8 | 512M x 8 |
| Rate ng Data | 2666 MT/s (DDR4-2666) | — |
| Clock Frequency | 1333 MHz (1.33 GHz) | — |
| VDD Supply Voltage | 1.2 V +/-60 mV | — |
| VDDQ Supply Voltage | 1.2 V +/-60 mV | — |
| VPP Supply Voltage | 2.5 V, -125 mV/+250 mV | — |
| Uri ng Interface | Parallel | — |
| I/O Structure | 1.2V pseudo open-drain | 1.2 V pseudo open-drain |
| Tingnan ang Volte | On-die internal adjustable VREFDQ generation | — |
| Packhaging | 78-FBGA (9 x 10.5 mm), TFBGA | 78-ball FBGA (9 x 10.5 mm) |
| Uri ng Pagpapasok | Surface Mount | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range (standard grade)] | 0C to +95C |
| Refresh | Refresh max interval extension at extended TC temperature range (125C capable per family features) | 64 ms, 8192-cycle refresh (to 95C) |
| Speed Grade Suffix | -075E | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Packaging Option Suffix | :B (ball map B designation per Mouser listing) | — |
| Industry Speed Grade | — | DDR4-2400 |
| Clock Rate | — | 1.2 GHz |
| Internal Banks | — | 8 banks (2 groups of 4) |
| Prefetch | — | 8n-bit |
| VDD / VDDQ | — | 1.2 V +/-60 mV |
| VPP | — | 2.5 V, -125 mV/+250 mV |
| VREFDQ | — | On-die internal, adjustable generation |
| FBGA Code | — | D9TGG |
| Marking Code | — | D9TGG |
| Data Strobe Preamble | — | Programmable |
| Latensya ng CAS | — | [DATA_NEEDED: CAS latency per speed bin table] |