MT40A512M8RH-075E:B vs MT40A512M8RH-083E 比較

詳細並排比較 MT40A512M8RH-075E:B 由 Micron Technology 與 MT40A512M8RH-083E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
MT40A512M8RH-075E:B MT40A512M8RH-075E:B - DDR4 4Gb 2666 MT/s SDRAM | Micron

MT40A512M8RH-075E:B - DDR4 4Gb 2666 MT/s SDRAM | Micron

MT40A512M8RH-075E:B ✓ 啟用中
Micron Technology
MT40A512M8RH-083E MT40A512M8RH-083E - 4Gb DDR4 512Mx8 2400MHz | Micron

MT40A512M8RH-083E - 4Gb DDR4 512Mx8 2400MHz | Micron

MT40A512M8RH-083E ✓ 啟用中

規格比較

參數 MT40A512M8RH-075E:B MT40A512M8RH-083E
品牌 Micron Technology Micron Technology
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DDR4 SDRAM DDR4 SDRAM
Density 4 Gbit 4 Gbit
組織 512M x 8 512M x 8
資料速率 2666 MT/s (DDR4-2666) —
Clock Frequency 1333 MHz (1.33 GHz) —
VDD Supply Voltage 1.2 V +/-60 mV —
VDDQ Supply Voltage 1.2 V +/-60 mV —
VPP Supply Voltage 2.5 V, -125 mV/+250 mV —
介面類型 Parallel —
I/O Structure 1.2V pseudo open-drain 1.2 V pseudo open-drain
參考電壓 On-die internal adjustable VREFDQ generation —
封裝 78-FBGA (9 x 10.5 mm), TFBGA 78-ball FBGA (9 x 10.5 mm)
安裝類型 Surface Mount —
工作溫度 [DATA_NEEDED: operating temperature range (standard grade)] 0C to +95C
Refresh Refresh max interval extension at extended TC temperature range (125C capable per family features) 64 ms, 8192-cycle refresh (to 95C)
Speed Grade Suffix -075E —
RoHS 狀態 [DATA_NEEDED: RoHS status] Compliant
Packaging Option Suffix :B (ball map B designation per Mouser listing) —
Industry Speed Grade — DDR4-2400
Clock Rate — 1.2 GHz
Internal Banks — 8 banks (2 groups of 4)
Prefetch — 8n-bit
VDD / VDDQ — 1.2 V +/-60 mV
VPP — 2.5 V, -125 mV/+250 mV
VREFDQ — On-die internal, adjustable generation
FBGA Code — D9TGG
Marking Code — D9TGG
Data Strobe Preamble — Programmable
CAS 延遲 — [DATA_NEEDED: CAS latency per speed bin table]

資料表與資源

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