RTAX2000DL-1CQ352B vs RTAX1000SL-CQ352V Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng RTAX2000DL-1CQ352B sa pamamagitan ng Microchip Technology at RTAX1000SL-CQ352V sa pamamagitan ng Microchip Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Microchip Technology
RTAX2000DL-1CQ352B - 2M-Gate Rad-Tolerant FPGA, CQFP-352 | Microchip
RTAX2000DL-1CQ352B ✓ NakahandaMicrochip Technology
RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000SL-CQ352V ✓ NakahandaPagsanggunian na paghahambing
| Parametro | RTAX2000DL-1CQ352B | RTAX1000SL-CQ352V |
|---|---|---|
| Brand | Microchip Technology | Microchip Technology |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Equivalent System Gates | 2000000 | 1,000,000 |
| Logic Cells | 29568 | 18,144 |
| Configurable Logic Blocks (CLBs) | 19712 | — |
| Core Supply Voltage (Nominal) | 1.5 V | — |
| Core Supply Voltage Range | 1.425 V to 1.575 V | — |
| Maximum Combinatorial Delay | 0.930 ns | — |
| DSP Mathblocks (max) | 120 | — |
| DSP MAC Performance | 125 MHz, 18-bit x 18-bit multiply-accumulate | — |
| Embedded Memory | 540 kbits (with optional EDAC protection) | Embedded SRAM with built-in FIFO control logic |
| Technology | CMOS, antifuse (OTP, nonvolatile) | — |
| Total Ionizing Dose (Functional) | 300 krad (Si) | — |
| Total Ionizing Dose (Parametric) | 200 krad (Si) | — |
| Packhaging | CQFP-352 (ceramic quad flat pack) | 352-pin Ceramic CQFP (CQ352V) |
| Terminal Count | 352 | — |
| Input / Output Terminals | 166 input, 166 output | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Radiation Tolerance Class | Radiation-tolerant (space-flight) | — |
| Configuration | Live at power-up (antifuse, single chip) | — |
| Family | — | RTAX-SL (RTAX-S/SL Radiation-Tolerant FPGAs) |
| CLBs (Logic Modules) | — | 12,096 |
| Maximum Toggle Frequency | — | 581 MHz |
| Process Technology | — | 0.15 um CMOS |
| Core Voltage | — | 1.5 V |
| Programming Technology | — | Antifuse (one-time programmable) |
| Radiation Tolerance | — | Radiation-tolerant, space-flight qualified family |
| Power-Up Behavior | — | Live at power-up (non-volatile) |
| Configuration Upset Immunity | — | No SEU in configuration memory (antifuse) |
| Temperature na Operasyon | — | [DATA_NEEDED: operating temperature range] |
| I/O Voltage | — | [DATA_NEEDED: I/O bank voltage range] |
| Total Ionizing Dose (TID) | — | [DATA_NEEDED: TID rating in krad (Si)] |
| Level ng MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Tindminan RoHS | — | [DATA_NEEDED: RoHS compliance status] |
| Estimated Equivalent Gates per CLB | — | [DATA_NEEDED: gates-per-CLB ratio] |