RTAX2000DL-1CQ352V vs RTAX2000DL-CQ352B Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng RTAX2000DL-1CQ352V sa pamamagitan ng Microchip Technology at RTAX2000DL-CQ352B sa pamamagitan ng Microchip Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Microchip Technology
RTAX2000DL-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-1CQ352V ✓ NakahandaMicrochip Technology
RTAX2000DL-CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-CQ352B ✓ NakahandaPagsanggunian na paghahambing
| Parametro | RTAX2000DL-1CQ352V | RTAX2000DL-CQ352B |
|---|---|---|
| Brand | Microchip Technology | Microchip Technology |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | RTAX-DSP (RTAX2000DL) | — |
| Equivalent System Gates | 2,000,000 (approx.) | 2,000,000 |
| Logic Cells | 29,568 | [DATA_NEEDED: Logic Cells] |
| CLBs | 19,712 | 19,712 |
| Core Supply Voltage | 1.425 V to 1.575 V (nominal 1.5 V) | — |
| Technology | Digital CMOS | — |
| Programming Technology | Antifuse (one-time programmable) | Nonvolatile antifuse |
| Radiation Tolerance | Radiation-tolerant (RTAX-DSP) | — |
| Configuration | Live at power-up, no external boot memory | Live at power-up, no external boot PROM required |
| Speed Grade | -1 | — |
| Packhaging | CQ352 (352-pin ceramic QFP) | 352-terminal ceramic CQFP, metal-sealed |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Application Domain | Space-flight systems | Space flight systems |
| Special Features | DSP multiply-accumulate blocks (DL variant) | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS Status] | — |
| Temperature na Operasyon | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: Operating Temperature Range] |
| Embedded SRAM | [DATA_NEEDED: Embedded SRAM capacity] | — |
| DSP Mathblocks | — | Up to 120 |
| DSP MAC Performance | — | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Embedded Memory | — | Up to 540 kbits with optional EDAC protection |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose (Parameter) | — | 200 krad (Si) |
| Core Supply Voltage (Nominal) | — | 1.5 V |
| Core Supply Voltage Range | — | 1.425 V to 1.575 V |
| Terminal Pitch | — | 0.500 mm |