RTAX2000DL-CQ352B vs RTAX2000DL-CQ352V Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng RTAX2000DL-CQ352B sa pamamagitan ng Microchip Technology at RTAX2000DL-CQ352V sa pamamagitan ng Microchip Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Microchip Technology
RTAX2000DL-CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-CQ352B ✓ NakahandaMicrochip Technology
RTAX2000DL-CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-CQ352V ✓ NakahandaPagsanggunian na paghahambing
| Parametro | RTAX2000DL-CQ352B | RTAX2000DL-CQ352V |
|---|---|---|
| Brand | Microchip Technology | Microchip Technology |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Equivalent System Gates | 2,000,000 | 2,000,000 |
| Logic Cells | [DATA_NEEDED: Logic Cells] | 29,568 |
| CLBs | 19,712 | 19,712 |
| DSP Mathblocks | Up to 120 | Up to 120 (18-bit x 18-bit MAC, up to 125 MHz) |
| DSP MAC Performance | 125 MHz, 18-bit x 18-bit multiply-accumulate | — |
| Embedded Memory | Up to 540 kbits with optional EDAC protection | Up to 540 kbits SRAM with optional EDAC |
| Programming Technology | Nonvolatile antifuse | — |
| Total Ionizing Dose (Functional) | 300 krad (Si) | — |
| Total Ionizing Dose (Parameter) | 200 krad (Si) | — |
| Core Supply Voltage (Nominal) | 1.5 V | — |
| Core Supply Voltage Range | 1.425 V to 1.575 V | — |
| Packhaging | 352-terminal ceramic CQFP, metal-sealed | CQFP-352, hermetically sealed ceramic, metal-sealed cofired |
| Terminal Pitch | 0.500 mm | 0.500 mm |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | [DATA_NEEDED: Operating Temperature Range] | -55C to +125C |
| Configuration | Live at power-up, no external boot PROM required | Live-at-power-up (antifuse, no external boot device) |
| Application Domain | Space flight systems | — |
| Technology | — | CMOS, antifuse (nonvolatile, one-time programmable) |
| Core Supply Voltage | — | 1.5 V nominal (1.425 V to 1.575 V) |
| Maximum Combinatorial Delay | — | 1.100 ns |
| Total Ionizing Dose (TID) | — | 300 krad (functional); 200 krad (per family data) |
| Family | — | RTAX-DSP (RTAX-S/SL and RTAX-DSP radiation-tolerant FPGAs) |