RTAX2000S-1CQ352V vs RTAX1000SL-CQ352V Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng RTAX2000S-1CQ352V sa pamamagitan ng Microchip Technology at RTAX1000SL-CQ352V sa pamamagitan ng Microchip Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Microchip Technology
RTAX2000S-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000S-1CQ352V ✓ NakahandaMicrochip Technology
RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000SL-CQ352V ✓ NakahandaPagsanggunian na paghahambing
| Parametro | RTAX2000S-1CQ352V | RTAX1000SL-CQ352V |
|---|---|---|
| Brand | Microchip Technology | Microchip Technology |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Equivalent System Gates | 2,000,000 gates | 1,000,000 |
| Logic Cells | 32,256 cells | 18,144 |
| Configurable Logic Blocks (CLBs) | 21,504 CLBs | — |
| Process Technology | Digital CMOS | 0.15 um CMOS |
| Speed Grade | -1 | — |
| Family | RTAX-S/SL Radiation-Tolerant FPGAs | RTAX-SL (RTAX-S/SL Radiation-Tolerant FPGAs) |
| Packhaging | CQ352 ceramic QFP, 352 pins | 352-pin Ceramic CQFP (CQ352V) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Configuration | Live at power-up, single-chip | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Embedded SRAM with built-in FIFO control logic |
| Core Voltage | [DATA_NEEDED: core voltage] | 1.5 V |
| I/O Voltage | [DATA_NEEDED: I/O voltage] | [DATA_NEEDED: I/O bank voltage range] |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Radiation Tolerance (TID) | [DATA_NEEDED: TID rating] | — |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| CLBs (Logic Modules) | — | 12,096 |
| Maximum Toggle Frequency | — | 581 MHz |
| Programming Technology | — | Antifuse (one-time programmable) |
| Radiation Tolerance | — | Radiation-tolerant, space-flight qualified family |
| Power-Up Behavior | — | Live at power-up (non-volatile) |
| Configuration Upset Immunity | — | No SEU in configuration memory (antifuse) |
| Total Ionizing Dose (TID) | — | [DATA_NEEDED: TID rating in krad (Si)] |
| Estimated Equivalent Gates per CLB | — | [DATA_NEEDED: gates-per-CLB ratio] |