RTAX250S-1LG624B vs RTAX2000SL-1CGS624V Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng RTAX250S-1LG624B sa pamamagitan ng Microchip Technology at RTAX2000SL-1CGS624V sa pamamagitan ng Microsemi. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Microchip Technology
RTAX250S-1LG624B - Rad-Tolerant FPGA 250K Gates | Microchip
RTAX250S-1LG624B ✓ NakahandaMicrosemi
RTAX2000SL-1CGS624V - 2M-Gate Rad-Tolerant FPGA | Actel/Microchip
RTAX2000SL-1CGS624V ✓ NakahandaPagsanggunian na paghahambing
| Parametro | RTAX250S-1LG624B | RTAX2000SL-1CGS624V |
|---|---|---|
| Brand | Microchip Technology | Microsemi |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | RTAX-S Radiation-Tolerant FPGA | — |
| Equivalent System Gates | 250000 gates | 2000000 |
| Logic Cells (Modules) | 2816 cells | — |
| Registers / Logic Cells Total | 4224 logic cells | — |
| User I/O | 248 I/O | — |
| Core Supply Voltage | 1.5 V | [DATA_NEEDED: core supply voltage] |
| Maximum System Frequency | 649 MHz | — |
| Process Technology | 0.15 um CMOS | — |
| Speed Grade | -1 | -1 |
| Packhaging | 624-Pin LGA (LG624), ceramic | 624-ball ceramic CGA (CGS624) |
| Temperature na Operasyon | -55C to +125C | [DATA_NEEDED: operating temperature range] |
| Configuration | Anti-fuse, live at power-up (single chip) | One-time programmable (OTP), live at power-up, single chip |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits with optional EDAC |
| Radiation Tolerance | Radiation-tolerant (RTAX-S class, per Microchip RTAX-S datasheet) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Program Numbering | B = Military program-level screening | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | — |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Logic Cells (CLBs) | — | 21504 |
| User I/Os (max, package dependent) | — | Up to 684 |
| Total Ionizing Dose (TID) | — | 300 krad (functional), 200 krad (parametric) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Technology | — | Digital CMOS, antifuse nonvolatile |
| Quality / Screening Suffix | — | S (space flow), V suffix qualification level |
| I/O Supply Voltage | — | [DATA_NEEDED: I/O supply voltage] |
| Embedded SRAM Features | — | Built-in FIFO control logic |
| Clocking | — | Segmentable clocks, chip-wide highway routing |