RTAX250S-1LG624V vs RTAX1000S-1LG624V Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng RTAX250S-1LG624V sa pamamagitan ng Microchip Technology at RTAX1000S-1LG624V sa pamamagitan ng Microchip Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Microchip Technology
RTAX250S-1LG624V RTAX250S-1LG624V - 250K-Gate Rad-Tolerant FPGA 1.5V | Microchip

RTAX250S-1LG624V - 250K-Gate Rad-Tolerant FPGA 1.5V | Microchip

RTAX250S-1LG624V ✓ Nakahanda
Microchip Technology
RTAX1000S-1LG624V RTAX1000S-1LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip

RTAX1000S-1LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip

RTAX1000S-1LG624V ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro RTAX250S-1LG624V RTAX1000S-1LG624V
Brand Microchip Technology Microchip Technology
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Aktibo Aktibo
Family RTAX-S Radiation-Tolerant FPGA —
Equivalent Gate Count 250000 gates —
Configurable Logic Blocks (CLBs) 2816 —
Logic Cells 4224 18144
I/Os 248 —
Core Supply Voltage 1.5 V nominal —
Speed Grade -1 -1
Packhaging CGA624 (LG624), 624-column ceramic column grid array LG624 (624-ball ceramic column grid array)
Package Suffix V (leaded column finish) —
Temperature na Operasyon -55C to +125C [DATA_NEEDED: operating temperature range]
Technology CMOS, antifuse programmable CMOS antifuse (one-time programmable)
Radiation Tolerance Radiation-tolerant (RTAX-S family, SEU-tolerant) [DATA_NEEDED: TID and SEU LET figures] —
Configuration Live at power-up, single chip, no boot PROM Nonvolatile, live at power-up, single chip
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL [DATA_NEEDED: MSL level] —
Tindminan RoHS [DATA_NEEDED: RoHS status - ceramic space-grade package typically exempt] [DATA_NEEDED: RoHS status]
Katayuan ng Lifecycle Active —
Equivalent System Gates — 1000000
CLBs — 12096
Maximum User I/Os — 418
Embedded Memory — Up to 540 kbits SRAM with optional EDAC
Total Ionizing Dose (Functional) — 300 krad (Si)
Total Ionizing Dose (Parametric) — 200 krad (Si)
SEU Rate — Less than 1E-10 errors per bit-day
Combinatorial Delay (max) — 0.93 ns
Radiation Tolerance Class — Rad-tolerant (space flight)
Architecture Family — RTAX-S (based on Axcelerator)
Screening — [DATA_NEEDED: screening flow per order code suffix]
Supply Voltage (Core) — [DATA_NEEDED: core supply voltage]

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