THS4551IRGTR vs ADA4945-1ACPZ Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng THS4551IRGTR sa pamamagitan ng Texas Instruments at ADA4945-1ACPZ sa pamamagitan ng Analog Devices. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Analog Devices
ADA4945-1ACPZ - Low-Noise FDA ADC Driver, 3-10V | Analog Devices
ADA4945-1ACPZ ✓ NakahandaPagsanggunian na paghahambing
| Parametro | THS4551IRGTR | ADA4945-1ACPZ |
|---|---|---|
| Brand | Texas Instruments | Analog Devices |
| Kategorya | Amplifier ICs | Amplifier ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Product Type | Fully Differential Amplifier (FDA) | Fully Differential Amplifier (FDA) / ADC Driver |
| Number of Channels | 1 | 1 |
| -3 dB Bandwidth (G = 1) | 150 MHz | — |
| Slew Rate | 50 V/µs | [DATA_NEEDED: slew rate] |
| Input Voltage Noise Density | 1.5 nV/√Hz | — |
| Input Offset Voltage | [DATA_NEEDED: input offset voltage] | — |
| DC Open-Loop Gain | 100 dB | — |
| Supply Voltage Range | 2.7 V to 5.4 V (single supply) | 3 V to 10 V |
| Type ng Output | Rail-to-Rail Differential | Differential, rail-to-rail |
| Output Common-Mode Control | Yes (VOCM pin) | Yes (VOCM pin) |
| Temperature na Operasyon | -40 C to +125 C | — |
| Packhaging | VQFN-16 (RGT) 3x3 mm with exposed pad | 16-LFCSP (3 mm × 3 mm) with exposed pad |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Input Voltage Noise (full power mode) | — | 1.8 nV/√Hz |
| Input Offset Voltage Drift | — | 0.1 µV/°C |
| Power Modes | — | 2 selectable (full power / low power) |
| Output Limiting | — | Yes |
| -3 dB Bandwidth | — | [DATA_NEEDED: bandwidth] |
| Kuru-kuryente ng Kapayapaan | — | [DATA_NEEDED: quiescent current] |
| Hanay ng Temperature na Operasyon | — | -40 °C to +125 °C |
| Process Technology | — | SiGe complementary bipolar, dielectrically isolated |