TJ30S06M3L(T6L1 vs IRF4905PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng TJ30S06M3L(T6L1 sa pamamagitan ng Toshiba at IRF4905PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro TJ30S06M3L(T6L1 IRF4905PBF
Brand Toshiba Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity P-Channel —
Drain-Source Voltage (VDSS) -60 V —
Gate-Source Voltage (VGSS) +10 V / -20 V —
Continuous Drain Current (ID) @ Tc=25°C -30 A —
Power Dissipation (PD) @ Tc=25°C 68 W —
RDS(ON) Max @ VGS=-10 V 21.8 mΩ —
RDS(ON) Typ @ VGS=-10 V 16.8 mΩ —
Gate Threshold Voltage (Vth) -3.0 V (typ) @ VDS=-1 mA —
Drain Leakage (IDSS) Max -10 µA @ VDS=-60 V —
Input Capacitance (Ciss) 3950 pF —
Hanay ng Temperature na Operasyon -55°C to +175°C (Tj) -55 °C to +175 °C (junction)
Packhaging DPAK+ (TO-252-3) TO-220AB (through-hole)
Uri ng Pagpapasok Surface Mount Through Hole
Automotive Qualification AEC-Q101 —
Technology U-MOS (Silicon P-Channel MOS) HEXFET (IR MOSFET)
FET Type — P-Channel
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at TC — -74 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TC — 200 W
On-Resistance RDS(on) max at VGS=-10V — 20 mΩ
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/range]
Total Gate Charge (Qg) — 120 nC
Pin Configuration — Gate - Drain - Source (left to right)
Lead-Free / RoHS — Yes (PBF suffix = lead-free, RoHS compliant)
Level ng MSL — 1 (not moisture-sensitive for TO-220)

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