AFT26HW050SR3 - 9W Asym Doherty LDMOS 2496-2690 MHz | NXP
MPN: AFT26HW050SR3 ✓ NakahandaAFT26HW050SR3 Ulas
An RF power LDMOS transistor is a lateral double-diffused metal-oxide-semiconductor field-effect transistor optimized for high-frequency, high-power operation. Within the broader taxonomy it is a power MOSFET, then a discrete semiconductor, and finally a building block of RF front-end modules. Airfast LDMOS specifically targets cellular base-station power amplifiers where linearity, gain, and thermal stability across instantaneous bandwidth are paramount. The AFT26HW050SR3 sits in NXP's Airfast 26-series lineup aimed at the 2.6 GHz TDD-LTE and emerging 5G NR bands.
Key features include operation from 2496 to 2690 MHz, 14.2 dB typical power gain, integrated asymmetrical Doherty input networks, an NI-780-4S4 air-cavity ceramic package for low thermal resistance, and RoHS-compliant construction. The wide instantaneous bandwidth supports multi-carrier LTE signals up to 60 MHz or wider without re-matching, simplifying radio unit design for carriers aggregating multiple LTE bands.
The transistor uses an N-channel enhancement-mode LDMOS structure with separate drain pads for the main and peak PA sections. Internal matching reduces external component count, and the integrated design shortens the Doherty combiner path, improving efficiency at 6–9 dB output back-off where LTE signals statistically operate most of the time.
Typical applications include 4G LTE and 5G NR TDD base-station power amplifiers, multi-carrier macro-cell transmitters, and Doherty amplifier reference designs for the 2.6 GHz band. It is also used in active antenna systems (AAS) and small-cell infrastructure where size, gain, and Doherty efficiency converge.
When designing with the AFT26HW050SR3, follow the reference PCB layout and bias network from the NXP application notes for Doherty operation. Adequate heatsinking and forced-air cooling are essential at full CW-rated output, and harmonic filtering must be sized for the selected LTE signal bandwidth.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet, providing engineers with a faster path to component selection for 2.6 GHz base-station PA designs.
Mga alternatibo na pwedeng ilagay na AFT26HW050SR3 — parehas na package, pin-to-pin na katugmang. Hindi kasama ang mga bahagi ng iba't-ibang package na nangangailangan ng pagpapaayos ng PCB.
Variante sa Seri na ito
Katulad na modelo sa serye na katugma sa pagpasok AFT26HW050SR3 (parehas na form factor at footprint) — pagkakaiba sa Mounting Type, Manufacturer, Configuration, Device Type, Frequency Range.
AFT26HW050GSR3
✅ Drop-InMagkontak para sa presyo
Tingnan ang Datasheet →AFT26H050W26SR3
✅ Drop-InMagkontak para sa presyo
Tingnan ang Datasheet →AFT26P100-4S2R6
✅ Drop-In📋 Alternatibo na Reference (hindi sa katalogo)
AFT26HW050SR3 Mga Pinakamataas na Rating at Electrical Characteristics
| Manufacturer | NXP Semiconductors |
| Part Family | Airfast AFT26HW050S Series |
| Device Type | RF Power LDMOS Transistor (Asymmetrical Doherty) |
| Transistor Polarity | N-Channel |
| Mode | Enhancement Mode |
| Frequency Range | 2496 MHz to 2690 MHz |
| Output Power (Average) | 9 W (Average) |
| Output Power (Peak) | 50 W (Peak) |
| Power Gain (Typical) | 14.2 dB |
| Drain Voltage (Operating) | 28 V |
| Quiescent Current (Test) | 100 mA |
| Packhaging / Kaso | NI-780-4S4 (Ceramic Air-Cavity) |
| Topolohiya | Asymmetrical Doherty (Main + Peak) |
| Application Band | 2.6 GHz TDD-LTE / 5G NR |
| Tindminan RoHS | Compliant |
| Lead-Free | Yes |
| Uri ng Pagpapasok | Surface Mount (SMD RF Flange) |
| Series | Airfast RF Power |
Gabay sa Pin Configuration ng AFT26HW050SR3 ni-780-4s4 (ceramic air-cavity)
Pin configuration para sa AFT26HW050SR3 (ni-780-4s4 (ceramic air-cavity) package). Ang power device na ito ay may gate, drain, at source terminals. Para sa mga non-polarized package, sumangguni sa datasheet ng manufacturer para sa eksaktong oryentasyon ng pin 1 at mga detalye ng footprint. Kasama sa mga karaniwang aplikasyon ang disenyo ng power supply, motor driving, at load switching.
Wala ng detalyadong pinout data na magagamit para sa AFT26HW050SR3.
Sumangguni sa datasheet para sa buong pin configuration.
Ligtas na Operating Area (DC)
Tipikal na mga Gamit
AFT26HW050SR3 ay nararapat para sa 6 aplikasyons: 4G LTE TDD Macro-Cell Base Station PA, 5G NR TDD Active Antenna System (AAS), Multi-Carrier Doherty Power Amplifier, Small-Cell / Pico-Cell Base Station, Digital Predistortion (DPD) Driver Stage, Private LTE / Industrial Network Radio.
4G LTE TDD Macro-Cell Base Station PA
The AFT26HW050SR3's 9 W average / 50 W peak output and 14.2 dB gain make it well suited to the final-stage Doherty PA of a 4G LTE TDD macro-cell base-station radio unit covering Band 38/40/41 (2496–2690 MHz). It is biased at 28 V and 100 mA quiescent, which is the canonical bias point for Airfast LDMOS Doherty operation in the 2.6 GHz band. Designers benefit from very wide instantaneous bandwidth—the part supports LTE carriers up to 60 MHz or wider without re-matching—simplifying multiband radio designs. The integrated main-and-peak architecture also reduces the BOM and PCB combiner complexity compared with discrete two-transistor Doherty implementations.
Inirekomenda
5G NR TDD Active Antenna System (AAS)
For 5G NR TDD active antenna systems operating in n38/n40/n41, the AFT26HW050SR3's wide instantaneous bandwidth and integrated Doherty structure map directly onto AAS radio-element requirements. Each antenna element needs a compact, efficient PA, and this part's NI-780-4S4 ceramic package fits behind element arrays where board height is constrained. Its 14.2 dB gain allows the device to be driven from a low-power DPD output stage without an extra gain block, reducing per-element power consumption. The 28 V bias point is also compatible with standard -48V-rectified AAS power rails, simplifying PSU design.
Inirekomenda
Multi-Carrier Doherty Power Amplifier
In multi-carrier Doherty power amplifiers used at the radio-unit output stage, the AFT26HW050SR3's asymmetrical Doherty topology enables high efficiency at the 6–9 dB output back-off where multi-carrier LTE and 5G NR signals statistically operate. Its 9 W average output rating is sized for typical macro-cell sectors handling 2–4 carriers, and the wide instantaneous bandwidth avoids retuning when carrier bandwidth changes. Compared with symmetric Doherty designs, the asymmetrical structure shifts the efficiency peak closer to the average operating point, lowering overall radio-unit energy consumption.
Inirekomenda
Small-Cell / Pico-Cell Base Station
For small-cell and pico-cell base stations operating in the 2.6 GHz TDD band, the AFT26HW050SR3 provides 9 W average output in a compact NI-780-4S4 footprint. This power level is appropriate for outdoor micro cells where 1–2 carriers per sector are aggregated and where efficiency at moderate back-off matters more than peak power. The 14.2 dB gain reduces the driver-stage power budget, and the integrated Doherty main/peak pair shortens the PCB combiner path—important in small-cell layouts where board area is limited.
Inirekomenda
Digital Predistortion (DPD) Driver Stage
The AFT26HW050SR3 can serve as the final-stage LDMOS in a DPD linearized transmitter chain for 2.6 GHz TDD radios. Its 14.2 dB gain and wide bandwidth support linear operation across multi-carrier LTE and 5G NR aggregated signals, allowing the upstream DPD engine to correct non-linearities without external filtering. The 28 V bias and integrated Doherty topology pair naturally with commercial DPD ASICs aimed at small-cell and macro-cell radio units, simplifying the overall RF lineup.
Inirekomenda
Private LTE / Industrial Network Radio
For private LTE and industrial network radios deployed in the 2.6 GHz CBRS-style allocations, the AFT26HW050SR3's 9 W average power and Doherty efficiency suit mid-power enterprise radio units. Its RoHS-compliant NI-780-4S4 package and wide bandwidth make it a flexible choice for industrial customers operating LTE or 5G NR in shared spectrum. Designers can reuse NXP's reference Doherty layouts, accelerating time-to-market for private-network equipment vendors.
Inirekomenda
Buod ng mga Inirekomendang Produkto
Impormasyon ng Talumpati sa Engineering for AFT26HW050SR3 — ikabit, gabay sa disenyo, at impormasyon ng pagsunod sa kautusan.
Paunawang Hanapin
Ikabit sa Mga Alternatibo
| Parametro | Ito ang Producto | AFT26HW050GSR3 | AFT26H050W26SR3 | AFT26P100-4S2R6 |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780-4S4 | NI-780-4S4 (GSR3 outline) - same family | NI-780-4S4 - same | NI-780-4S2 - same family |
| Frequency Range | 2496–2690 MHz | 2496–2690 MHz | 2496–2690 MHz | 2496–2690 MHz |
| Output Power (Average) | 9 W | 9 W | 9 W | ~15 W |
| Power Gain | 14.2 dB | 14.2 dB | 14.2 dB | ~13 dB |
| Drain Voltage | 28 V | 28 V | 28 V | 28 V |
| Topology | Asymmetrical Doherty | Asymmetrical Doherty | Asymmetrical Doherty | Asymmetrical Doherty |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Pangunahing mga Pagkakaiba
- Very wide instantaneous bandwidth in 2.6 GHz band (kumpara saAFT26P100-4S2R6)
- Integrated asymmetrical Doherty main + peak in single package (kumpara saAFT26HW050GSR3)
- 14.2 dB typical gain eliminates external driver stage (kumpara saAFT26P100-4S2R6)
Talaan ng Disenyo
Estimated: at 9 W average CW output and 28 V drain with ~50% PA efficiency, internal dissipation is about 9 W. The NI-780-4S4 package is rated for low thermal resistance; mount the device on a copper-molybdenum carrier with a forced-air heatsink and follow NXP reference layout to keep junction temperature within safe limits for base-station duty cycles.
Use the NXP reference PCB stack-up for Doherty LDMOS in the 2.6 GHz band—typically Rogers RO4350B or equivalent low-loss substrate. Maintain 50 ohm controlled-impedance traces on input and output, place DC blocking and bypass capacitors per the reference design, and keep the main/peak combiner trace lengths matched to within the tolerance specified in the application note.
Do not substitute the SR3 flange with the GSR3 outline without verifying the PCB footprint against the NXP datasheet mechanical drawings. Both are NI-780-family packages but flange dimensions and lead pitch differ slightly. Also verify bias sequencing—Vgs must be applied before Vdd to prevent device damage during power-up.
Impormasyon ng Pagsunod sa Kautusan
RoHS compliance confirmed from NXP AFT26HW050S datasheet and distributor listings. AEC-Q100 not applicable for RF power LDMOS.
