AFT26HW050SR3 vs AFT26HW050GSR3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng AFT26HW050SR3 sa pamamagitan ng NXP Semiconductors at AFT26HW050GSR3 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
AFT26HW050SR3 - 9W Asym Doherty LDMOS 2496-2690 MHz | NXP
AFT26HW050SR3 ✓ NakahandaNXP Semiconductors
AFT26HW050GSR3 - 9W RF Power LDMOS 2.5-2.7GHz Doherty | NXP
AFT26HW050GSR3 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | AFT26HW050SR3 | AFT26HW050GSR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | NXP Semiconductors | NXP Semiconductors |
| Part Family | Airfast AFT26HW050S Series | — |
| Device Type | RF Power LDMOS Transistor (Asymmetrical Doherty) | RF Power MOSFET (LDMOS), N-Channel, Enhancement Mode |
| Transistor Polarity | N-Channel | — |
| Mode | Enhancement Mode | — |
| Frequency Range | 2496 MHz to 2690 MHz | — |
| Output Power (Average) | 9 W (Average) | — |
| Output Power (Peak) | 50 W (Peak) | — |
| Power Gain (Typical) | 14.2 dB | — |
| Drain Voltage (Operating) | 28 V | — |
| Quiescent Current (Test) | 100 mA | — |
| Packhaging / Kaso | NI-780-4S4 (Ceramic Air-Cavity) | NI-780GS-4L4L (9-pin, ceramic) |
| Topolohiya | Asymmetrical Doherty (Main + Peak) | — |
| Application Band | 2.6 GHz TDD-LTE / 5G NR | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Uri ng Pagpapasok | Surface Mount (SMD RF Flange) | Chassis Mount (bolt-down, flange) |
| Series | Airfast RF Power | — |
| Part Number | — | AFT26HW050GSR3 |
| Family | — | Airfast RF Power |
| Operating Frequency | — | 2496 MHz to 2690 MHz |
| Typical Drain-Source Voltage (Vds) | — | 28 V |
| Maximum Drain-Source Voltage | — | 65 V |
| Output Power (P1dB / Avg) | — | 9 W average (Doherty) |
| Power Gain (Gp) | — | 14.2 dB at 2.69 GHz |
| Test Condition Gain | — | 14.2 dB @ 2.69 GHz |
| Test Condition Frequency | — | 2.496 GHz to 2.69 GHz |
| Quiescent Current (Iq) | — | 100 mA |
| Configuration | — | Single transistor, internally input-matched |
| Architecture | — | Asymmetric Doherty (paired carrier/peaking) |
| Technology | — | LDMOS (Laterally Diffused MOS), Airfast gen |
| REACH Status | — | Compliant |
| Temperature na Operasyon | — | -40 C to +150 C |