BAT43 vs BAT43-R0 Karşılaştırma

Ayrıntılı yan yana karşılaştırma BAT43 tarafından STMicroelectronics ve BAT43-R0 tarafından Taiwan SemiconductorAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre BAT43 BAT43-R0
Marka STMicroelectronics Taiwan Semiconductor
Kategori Diodes Diodes
Yaşam Döngüsü Durumu Aktif Aktif
Device Type Small Signal Schottky Diode —
Repetitive Peak Reverse Voltage (VRRM) 30 V 30 V
Forward Continuous Current (IF) 200 mA at Ta = 25 C —
Repetitive Peak Forward Current (IFRM) 500 mA (tp <= 1 s, delta <= 0.5) —
Non-Repetitive Surge Current (IFSM) 4 A (tp = 10 ms) —
Güç Tüketimi (Ptot) 200 mW at Tl = 65 C —
Technology Metal-to-silicon Schottky barrier —
ESD Protection Integrated guard ring against excessive voltage Fast guard ring against excessive voltage (ESD)
Forward Voltage [DATA_NEEDED: forward voltage at rated current] —
Reverse Leakage Current [DATA_NEEDED: reverse leakage current] —
Paket DO-35 (glass axial, through-hole) DO-35 axial glass (through hole)
Montaj Türü Through Hole Through Hole
Case Style Hermetically sealed glass body —
Configuration Single diode Single diode
İşletim Sıcaklığı [DATA_NEEDED: operating temperature range] —
RoHS Durumu [DATA_NEEDED: RoHS status] Compliant
Diode Type — Small Signal Schottky Barrier
Average Forward Current (IF(AV)) — 200 mA
Maximum Forward Voltage (VF) — 1 V
Non-Repetitive Peak Forward Surge Current (IFSM) — 4 A
Power Dissipation — 200 mW
Junction Operating Temperature — -65C to +125C
Reverse Recovery — Fast switching (Schottky, majority carrier)
Forward Voltage Turn-On — Very low turn-on voltage
Capacitance (Cj) — [DATA_NEEDED: junction capacitance]
Leakage Current (IR) — [DATA_NEEDED: reverse leakage current]
Packaging Type — [DATA_NEEDED: tape/reel or bulk option]

Dökümanlar & Kaynaklar

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