BSC0504NSIATMA1 vs BSC014N06NSATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma BSC0504NSIATMA1 tarafından Infineon ve BSC014N06NSATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | BSC0504NSIATMA1 | BSC014N06NSATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Transistor Türü | N-channel MOSFET | N-Channel MOSFET |
| Drain-to-Source Voltage | 30 V | — |
| Continuous Drain Current at Ta | 21 A | — |
| Continuous Drain Current at Tc | 72 A | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 30 W | — |
| Technology Family | OptiMOS 5 | — |
| Paket | PG-TDSON-8-6 | PG-TDSON-8-17 (SuperSO8 5x6 mm) |
| Montaj Türü | Surface Mount | Surface Mount |
| Pin Sayısı | 8 pins | — |
| Exposed Pad | Yes, according to distributor package description | — |
| On-State Resistance | [DATA_NEEDED: on-state resistance] | — |
| Gate Charge | [DATA_NEEDED: gate charge] | — |
| Gate Eşik Voltage | [DATA_NEEDED: gate threshold voltage] | — |
| Termal Direnç | [DATA_NEEDED: thermal resistance] | — |
| İşletim Sıcaklığı Aralığı | [DATA_NEEDED: operating temperature range] | -55C to +150C |
| AEC-Q100 Qualification | [DATA_NEEDED: AEC-Q100 qualification] | — |
| RoHS Durumu | unknown | Compliant |
| Lead-Free Status | unknown | — |
| Halogen-Free Status | unknown | — |
| REACH Status | unknown | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Drain-Source Voltage (VDS) | — | 60 V |
| Gate-Source Voltage (VGS) Max | — | +/- 20 V |
| Continuous Drain Current (ID) at Ta | — | 30 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) Typ @ VGS=10V | — | 1.4 mOhm |
| On-Resistance RDS(on) Max @ VGS=10V | — | 1.45 mOhm |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 156 W |
| MSL Seviyesi | — | 1 |
| Technology | — | OptiMOS 5 (shielded-gate trench) |