BSC084P03NS3GATMA1 vs BSZ0901NSIATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma BSC084P03NS3GATMA1 tarafından Infineon ve BSZ0901NSIATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
BSC084P03NS3GATMA1 - P-Ch 30V 78.6A OptiMOS P3 MOSFET | Infineon
BSC084P03NS3GATMA1 ✓ Aktif
Özellik Karşılaştırması
| Parametre | BSC084P03NS3GATMA1 | BSZ0901NSIATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -30 V | 30 V |
| Continuous Drain Current (Ta) | 14.9 A | — |
| Continuous Drain Current (Tc) | 78.6 A | — |
| Rds(on) max @ VGS = -10 V | 6.1 mOhm | — |
| Rds(on) max @ VGS = -2.5 V | [DATA_NEEDED: Rds(on) at 2.5V] | — |
| Gate Threshold Voltage (VGS(th) typ) | -1.7 V | — |
| Total Gate Charge (Qg) | 58 nC @ VGS = -10 V | [DATA_NEEDED: total gate charge Qg] |
| Input Capacitance (Ciss) | 3.19 nF | — |
| Output Capacitance (Coss) | 110 pF | — |
| Reverse Transfer Capacitance (Crss) | 1.52 nF | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 69 W | — |
| İşletim Sıcaklığı Aralığı | -55C to +150C | -55 C to +150 C (typical MOSFET range) |
| Paket | PG-TDSON-8-5 (SuperSO8 5x6) | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| Montaj Türü | Surface Mount | Surface Mount |
| Technology Family | OptiMOS P3 | — |
| RoHS Durumu | Compliant | Compliant |
| MSL Seviyesi | 1 (unlimited) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSZ0901NSIATMA1 |
| Series | — | OptiMOS 25V |
| Technology | — | OptiMOS trench N-channel MOSFET |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | — | 25 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Power Dissipation (PD) at Ta=25C | — | 2.1 W |
| Power Dissipation (PD) at Tc=25C | — | 69 W |
| Pin Sayısı | — | 8 |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Packaging | — | Tape & Reel (ATMA1 suffix = 13-inch reel) |