EPF10K200EBC600-3 vs EPF10K200EBI600-2N Karşılaştırma

Ayrıntılı yan yana karşılaştırma EPF10K200EBC600-3 tarafından Intel ve EPF10K200EBI600-2N tarafından IntelAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Intel
EPF10K200EBI600-2N EPF10K200EBI600-2N - 200K Gates FLEX 10KE FPGA | Intel

EPF10K200EBI600-2N - 200K Gates FLEX 10KE FPGA | Intel

EPF10K200EBI600-2N Obsolete

Özellik Karşılaştırması

Parametre EPF10K200EBC600-3 EPF10K200EBI600-2N
Marka Intel Intel
Kategori FPGA & CPLD FPGA & CPLD
Yaşam Döngüsü Durumu Obsolete Obsolete
Family FLEX 10KE FLEX 10KE
Series FLEX-10KE —
System Gates 200,000 —
Logic Elements / Cells 9,984 —
Logic Array Blocks (LABs) 1248 —
Embedded Memory (EABs) 24,576 bits —
Maximum User I/O 470 —
Number of PLLs 4 —
Core Voltage 2.5 V (2.375 V to 2.625 V) —
Process Technology 0.22 micrometer SRAM —
Speed Grade -3 (commercial) —
Paket 600-ball FineLine BGA, 45 x 45 mm 600-ball BGA (45 mm x 45 mm, 1.27 mm pitch)
Montaj Türü Surface Mount Surface Mount (BGA)
İşletim Sıcaklığı 0C to +70C (commercial) 0 °C to +70 °C (commercial)
JTAG Support Yes (IEEE 1149.1 boundary-scan) —
RoHS Durumu [DATA_NEEDED: RoHS compliance status] [DATA_NEEDED: RoHS compliance status]
Typical Gates — 200,000
Maximum System Gates — 513,000
Logic Elements (LEs) — 9,984
Embedded Array Blocks (EABs) — 12
Total RAM Bits — 98,304
User I/O Pins — 470
Dedicated Inputs — 6
Technology / Process — 0.22 µm CMOS SRAM
Core Supply Voltage — 2.5 V (2.3 V to 2.7 V)
I/O Supply Voltage — 2.5 V / 3.3 V (5 V tolerant I/O available)
Propagation Delay — 0.4 ns to 0.6 ns (per LE)
Maximum Internal Frequency — 200 MHz
Configuration Method — SRAM, JTAG (IEEE 1149.1), serial configuration EPROM
MSL Seviyesi — [DATA_NEEDED: moisture sensitivity level]

Dökümanlar & Kaynaklar

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