IAUC120N06S5N011ATMA1 vs IAUC120N04S6N010ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IAUC120N06S5N011ATMA1 tarafından Infineon ve IAUC120N04S6N010ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IAUC120N06S5N011ATMA1 - 60V 1.1mΩ OptiMOS-5 N-Ch MOSFET | Infineon
IAUC120N06S5N011ATMA1 ✓ AktifInfineon
IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon
IAUC120N04S6N010ATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IAUC120N06S5N011ATMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS-5 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) | 120 A (Tc=25°C, Vgs=10V) | — |
| Pulsed Drain Current (Idm) | 310 A (Tj) | — |
| On-Resistance Rds(on) max | 1.1 mΩ at Vgs=10 V | — |
| Gate-Source Voltage (Vgs) max | ±20 V | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total value] | — |
| Power Dissipation (Pd) | 188 W (Tc=25°C) | — |
| İşletim Sıcaklığı Aralığı | -55°C to +175°C (Tj) | -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) |
| Paket | PG-TDSON-8-53 (SSO8 5x6 mm) | PG-TDSON-8-34 (5x6 mm leadless) |
| Montaj Türü | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS Compliance | Compliant | — |
| MSL Seviyesi | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, per Infineon TDSON family) |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | — | 40 V |
| Continuous Drain Current (Id, Tc) | — | 150 A |
| Power Dissipation (Pd, Tc) | — | 150 W |
| RDS(on) at VGS=10V (typ) | — | 1.0 mΩ |
| RDS(on) at VGS=10V (max per LCSC excerpt) | — | 1.03 mΩ |
| Gate-Source Threshold (VGS(th), typ) | — | 3 V (at 90 µA) |
| Technology | — | OptiMOS 6 |
| RoHS Durumu | — | Compliant |
| Gate Drive Recommendation | — | 10 V VGS for full RDS(on) spec |
| Polarity | — | Single N-channel |