IAUTN04S7N005ATMA1 vs IAUCN04S7L050HATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IAUTN04S7N005ATMA1 tarafından Infineon ve IAUCN04S7L050HATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon
IAUCN04S7L050HATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IAUTN04S7N005ATMA1 | IAUCN04S7L050HATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™7 (40 V, Automotive) | — |
| Technology | N-Channel Trench MOSFET | Trench MOSFET, OptiMOS™ 7 40V |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tc=25°C) | 350 A | — |
| On-State Resistance RDS(on) max @ VGS=10V | 0.44 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | ±20 V |
| Güç Tüketimi (TC=25°C) | 218 W | — |
| İşletim Jant Sıcaklığı | -55 °C to +175 °C | -55 °C to +175 °C |
| Paket | PG-HSOF-8-8 (TOLL) 10 × 12 mm | PG-TDSON-8-57 (SuperSO8 half-bridge) |
| Montaj Türü | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | Dual N-Channel (Dual Drain, Half-Bridge) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (family-level, automotive grade) |
| RoHS Durumu | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes (per manufacturer datasheet) | — |
| MSL Seviyesi | [DATA_NEEDED: MSL level per JEDEC J-STD-020] | 1 (per JEDEC J-STD-020) |
| Gate Charge (Qg typ.) | [DATA_NEEDED: Qg at VGS=10V] | — |
| Total Gate Charge Figure of Merit (FOM) | [DATA_NEEDED: FOM = RDS(on) × Qg] | — |
| Series | — | OptiMOS™ 7 |
| Continuous Drain Current (ID), Tc=25°C | — | 65 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.04 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) @ Tc=25°C | — | 40 W |