IPC100N04S51R7ATMA1 vs IPC100N04S5L1R5ATMA1 Karşılaştırma

Ayrıntılı yan yana karşılaştırma IPC100N04S51R7ATMA1 tarafından Infineon ve IPC100N04S5L1R5ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Infineon
IPC100N04S51R7ATMA1 IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 ✓ Aktif
Infineon
IPC100N04S5L1R5ATMA1 IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 ✓ Aktif

Özellik Karşılaştırması

Parametre IPC100N04S51R7ATMA1 IPC100N04S5L1R5ATMA1
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS-5 —
Transistor Türü N-Channel MOSFET, Enhancement Mode —
Drain-Source Voltage VDS 40 V —
Continuous Drain Current ID 100 A (at TC) —
Pulsed Drain Current IDM [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage VGS [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) value] —
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) at VGS=10V] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissipation PD 115 W (at TC) —
Thermal Resistance RthJC 1.3 K/W —
İşletim Jant Sıcaklığı -55 °C to +175 °C —
Paket PG-TDSON-8-34 (SS08 leadless) PG-TDSON-8-34 (SS08 leadless)
Montaj Türü Surface Mount Surface Mount
MSL Seviyesi MSL1 (260 °C peak reflow) MSL1 (260C peak reflow)
AEC-Q101 Qualified Yes Yes
Avalanche Tested 100% tested 100%
RoHS Durumu Compliant (Green Product) Compliant (Green Product)
Built-in Body Diode Yes —
Product Family — OptiMOS-5 40 V
Polarity / Channel Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) Max — 40 V
Gate-Source Voltage (VGS) Max — 20 V
Continuous Drain Current (ID) at Tc=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Power Dissipation (PD) at Tc=25C — 115 W
On-Resistance RDS(on) at VGS=10 V — 1.5 mOhm (typ)
On-Resistance RDS(on) at VGS=4.5 V — 1.8 mOhm (typ)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ]
İşletim Sıcaklığı Aralığı — -55C to +175C

Dökümanlar & Kaynaklar

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