IPC50N04S5L5R5ATMA1 vs IAUC60N04S6L030HATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IPC50N04S5L5R5ATMA1 tarafından Infineon ve IAUC60N04S6L030HATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 ✓ AktifInfineon
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IPC50N04S5L5R5ATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Transistor Türü | N-Channel MOSFET | — |
| Mode | Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tc) | 50 A | — |
| Maximum Drain Current (silicon-limited, 25 °C) | 60 A | — |
| On-Resistance RDS(on) max @ VGS=10 V | 5.5 mΩ | — |
| Gate Threshold VGS(th) | Logic Level (enhancement at ≤ 4.5 V VGS) | — |
| Power Dissipation (Tc) | 42 W | — |
| Thermal Resistance Junction-to-Case RthJC | 3.6 K/W | — |
| İşletim Sıcaklığı Aralığı | -55 °C to +175 °C | — |
| Paket | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Montaj Türü | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| MSL (Moisture Sensitivity Level) | MSL1 | — |
| Peak Reflow Temperature | 260 °C | — |
| Avalanche Rating | 100 % Avalanche Tested | — |
| RoHS / REACH | RoHS Compliant (Green Product) | — |
| Manufacturer | — | Infineon Technologies |
| Part Series | — | OptiMOS 6 |
| Configuration | — | Half-Bridge (2 N-Channel) |
| Continuous Drain Current (ID) at TJ | — | 60 A |
| On-Resistance R_DS(on) at VGS=10V | — | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | — | 35 nC |
| Output Capacitance (Coss) | — | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | — | 596 pF |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Maximum Power Dissipation (PD) at TC | — | 75 W |
| İşletim Jant Sıcaklığı | — | -55 C to +175 C |
| Automotive Qualification | — | AEC-Q101 (per part number suffix) |
| RoHS Durumu | — | Compliant |
| MSL Seviyesi | — | 1 (per JEDEC J-STD-020) |