IPD135N03LGATMA1 vs IRFR120NTRPBF Karşılaştırma

Ayrıntılı yan yana karşılaştırma IPD135N03LGATMA1 tarafından Infineon ve IRFR120NTRPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Infineon
IPD135N03LGATMA1 IPD135N03LGATMA1 - 30V 30A N-Ch OptiMOS MOSFET | Infineon

IPD135N03LGATMA1 - 30V 30A N-Ch OptiMOS MOSFET | Infineon

IPD135N03LGATMA1 ✓ Aktif

Özellik Karşılaştırması

Parametre IPD135N03LGATMA1 IRFR120NTRPBF
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS™ —
Transistor Türü N-Channel MOSFET —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) 30 A (Tc) —
Power Dissipation (PD) 31 W (Tc) —
Paket / Kas PG-TO252-3 (DPAK), Surface Mount —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at 10V VGS] —
Gate Charge (Qg) Ultra-low (per OptiMOS™ family spec) —
Output Charge (Qoss) Ultra-low (per OptiMOS™ family spec) —
İşletim Sıcaklığı Aralığı -55°C to +175°C (TJ max typical for OptiMOS) —
Montaj Türü Surface Mount Surface Mount
MSL Seviyesi 1 (per JEDEC J-STD-020) —
RoHS Durumu Compliant —
Lead-Free Finish Yes —
Qualification Industrial (Infineon OptiMOS™ standard grade) —
Drain-to-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=25C — 9.4 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD) at TC=25C — 48 W
Static Drain-to-Source On-Resistance (RDS(on)) max — 210 milliohms at VGS=10V
Gate-to-Source Threshold Voltage (VGS(th)) — 2 V to 4 V typical
Total Gate Charge (Qg) typical — 16.7 nC
Gate-to-Source Charge (Qgs) — [DATA_NEEDED: Qgs]
Gate-to-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: Crss]
İşletim Jant Sıcaklığı Aralığı — -55C to +175C
Paket — TO-252AA (DPAK)
Channel Type — N-Channel Enhancement Mode
Technology — HEXFET (IR MOSFET fifth generation)
Avalanche Energy Rating (EAS) — [DATA_NEEDED: EAS]
Thermal Resistance Junction-to-Case (RthJC) max — [DATA_NEEDED: RthJC]
Lead-Free / RoHS Status — Lead-Free, RoHS Compliant

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