IPD70N10S312ATMA1 vs BSZ096N10LS5ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IPD70N10S312ATMA1 tarafından Infineon ve BSZ096N10LS5ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
BSZ096N10LS5ATMA1 - 100V 9.6mΩ OptiMOS 5 N-Channel MOSFET | Infineon
BSZ096N10LS5ATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IPD70N10S312ATMA1 | BSZ096N10LS5ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number | IPD70N10S312ATMA1 | — |
| Product Family | OptiMOS-T Power-Transistor | OptiMOS 5 |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc) | 70 A | — |
| Pulsed Drain Current (IDM) | 180 A | — |
| Power Dissipation (PD, Tc) | 125 W | — |
| On-State Resistance (RDS(on)) | 11.1 mΩ @ 70 A, 10 V VGS | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Input Capacitance (Ciss) | 4355 pF @ 25 V | — |
| Total Gate Charge (Qg) | 65 nC @ 10 V | — |
| Operating Temperature (TJ) | -55 °C to +175 °C | — |
| Paket | PG-TO252-3-11 (DPAK, 2 Leads + Tab) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| Montaj Türü | Surface Mount | Surface Mount |
| MSL Seviyesi | MSL1 (up to 260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Tested | 100 % (per datasheet) | — |
| RoHS Compliance | Green product, RoHS compliant | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS max) | — | 100 V |
| Gate-Source Voltage (VGS max) | — | 20 V (typical) |
| Continuous Drain Current (ID, TC=25 °C) | — | 40 A |
| Maximum Silicon Drain Current (ID max) | — | 62 A |
| Pulse Drain Current (ID,pulse) | — | 160 A |
| On-Resistance RDS(on) max | — | 9.6 mΩ at VGS=10 V |
| Total Power Dissipation (Ptot, TC=25 °C) | — | 69 W |
| Gate Threshold Voltage VGS(th) | — | Logic-level (low single-volt range) |
| Diode Continuous Forward Current (IS) | — | 40 A (TC=25 °C) |
| Diode Forward Voltage (VSD) | — | 0.85 V typ, 1.2 V max at IF=20 A |
| İşletim Sıcaklığı Aralığı | — | -55 °C to +150 °C (junction) |
| Technology | — | OptiMOS 5 trench MOSFET |
| Gate Drive | — | Logic-level compatible |
| ESD Protection | — | Yes (gate-integrated) |
| RoHS Durumu | — | Compliant |
| Packaging Code | — | ATMA1 (tape and reel) |