IRF5305PBF vs IRFU5305PBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRF5305PBF tarafından Infineon ve IRFU5305PBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRF5305PBF | IRFU5305PBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | P-Channel | — |
| Drain-to-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | -31 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | -110 A (pulsed) |
| Maximum Power Dissition (PD) at TC=25C | 110 W | — |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V | 60 mOhm (typical) | — |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V ID=-16A | [DATA_NEEDED: max RDS(on) at -10V] | — |
| Total Gate Charge (Qg) | 42 nC (typical) | 42 nC (typical) |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Turn-On Delay Time (td(on)) | [DATA_NEEDED: td(on)] | — |
| Turn-Off Delay Time (td(off)) | [DATA_NEEDED: td(off)] | — |
| Thermal Resistance, Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC] | — |
| Thermal Resistance, Junction-to-Ambient (RthJA) | [DATA_NEEDED: RthJA] | — |
| İşletim Jant Sıcaklığı | -55C to +175C | -55 °C to +175 °C |
| Paket | TO-220AB (through-hole, 3-pin + tab) | IPAK (TO-251AA) Through-Hole, 3 pins |
| Montaj Türü | Through Hole | Through Hole |
| Lead-Free Plating (PBF suffix) | Yes (Pb-free) | — |
| RoHS Durumu | Compliant | — |
| Technology | HEXFET (planar DMOS) | — |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at Tc | — | -31 A |
| On-Resistance RDS(on) max @ VGS=-10V | — | 65 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Power Dissipation (PD) at Tc=25°C | — | 110 W |
| Thermal Resistance Junction-to-Case (RθJC) | — | 1.36 °C/W |
| Thermal Resistance Junction-to-Ambient (RθJA) | — | 62 °C/W |
| Avalanche Rated | — | Yes (EAS rated) |
| RoHS Compliance | — | Compliant |