IRF5305PBF vs IRFU5305PBF 比較

詳細並排比較 IRF5305PBF 由 Infineon 與 IRFU5305PBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRF5305PBF IRFU5305PBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type P-Channel —
Drain-to-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at TC=25C -31 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] -110 A (pulsed)
Maximum Power Dissition (PD) at TC=25C 110 W —
Gate-to-Source Voltage (VGS) max ±20 V —
Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V 60 mOhm (typical) —
Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V ID=-16A [DATA_NEEDED: max RDS(on) at -10V] —
Total Gate Charge (Qg) 42 nC (typical) 42 nC (typical)
Gate-to-Drain Charge (Qgd) [DATA_NEEDED: Qgd] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Turn-On Delay Time (td(on)) [DATA_NEEDED: td(on)] —
Turn-Off Delay Time (td(off)) [DATA_NEEDED: td(off)] —
Thermal Resistance, Junction-to-Case (RthJC) [DATA_NEEDED: RthJC] —
Thermal Resistance, Junction-to-Ambient (RthJA) [DATA_NEEDED: RthJA] —
工作接面溫度 -55C to +175C -55 °C to +175 °C
封裝 TO-220AB (through-hole, 3-pin + tab) IPAK (TO-251AA) Through-Hole, 3 pins
安裝類型 Through Hole Through Hole
Lead-Free Plating (PBF suffix) Yes (Pb-free) —
RoHS 狀態 Compliant —
Technology HEXFET (planar DMOS) —
Polarity — P-Channel
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at Tc — -31 A
On-Resistance RDS(on) max @ VGS=-10V — 65 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Power Dissipation (PD) at Tc=25°C — 110 W
Thermal Resistance Junction-to-Case (RθJC) — 1.36 °C/W
Thermal Resistance Junction-to-Ambient (RθJA) — 62 °C/W
Avalanche Rated — Yes (EAS rated)
RoHS Compliance — Compliant

資料表與資源

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