IRF7105TRPBF vs IRF7306TRPBF Karşılaştırma

Ayrıntılı yan yana karşılaştırma IRF7105TRPBF tarafından Infineon ve IRF7306TRPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IRF7105TRPBF IRF7306TRPBF
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer Infineon Technologies —
Part Series IRF7105 (HEXFET Fifth Generation) —
Polarity / Configuration N-Channel + P-Channel, dual MOSFET in one package —
Drain-to-Source Voltage (Vds) 25 V —
Continuous Drain Current - N-channel (Id, N-ch) 3.5 A —
Continuous Drain Current - P-channel (Id, P-ch) 2.3 A —
Rds(on) Maximum 100 mOhm —
Technology HEXFET (IR MOSFET, fifth generation) HEXFET Power MOSFET (Generation V)
Paket 8-SO (SOIC-8) 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width)
Total Package Power Dissipation (Pd) 2 W —
Montaj Türü Surface Mount Surface Mount
İşletim Sıcaklığı Aralığı [DATA_NEEDED: junction temperature range] -55°C to +150°C (junction)
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: typical Vgs(th)] —
Packaging Form Tape & Reel (TR) —
Lead-Free / RoHS Status Pb-free (PBF suffix), RoHS compliant —
Pin Sayısı 8 —
Polarity — P-Channel (dual)
Number of Channels — 2 (independent, in single package)
Drain-to-Source Voltage (VDS) — -30 V
Continuous Drain Current (ID) — -3.6 A at 25°C
On-Resistance RDS(on) max — 100 mOhm at VGS = -10 V
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg total]
Maximum Power Dissipation — 2 W at TA = 25°C
Packaging — Tape & Reel (TR)
MSL Seviyesi — 1 (per JEDEC J-STD-020)
RoHS Compliance — Yes (PBF suffix indicates Pb-free)
Qualification — Consumer market qualification standards (per IR/Infineon datasheet)
Avalanche Rated — Yes (ruggedized device per datasheet)

Dökümanlar & Kaynaklar

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