IRFB7534PBF vs IRL3705NPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRFB7534PBF tarafından Infineon ve IRL3705NPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRFB7534PBF | IRL3705NPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRFB7534PBF | — |
| Technology | StrongIRFET™ (planar N-channel) | HEXFET (planar cell, fifth generation) |
| Transistor Türü | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) max | 60 V | — |
| Continuous Drain Current (ID) at Tc=25C | 195 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Power Dissipation (PD) at Tc=25C | 294 W | — |
| On-Resistance RDS(on) max at VGS=10V | 2.4 mOhm | — |
| Gate Threshold Voltage VGS(th) | 3.7 V (typ) | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Avalanche Energy Rated | Yes | — |
| Paket | TO-220AB | TO-220AB (3-pin through-hole) |
| Montaj Türü | Through Hole | Through Hole |
| İşletim Sıcaklığı Aralığı | -55C to +175C | — |
| RoHS Durumu | Compliant (PbF suffix) | Compliant (per PBF suffix) |
| MSL Seviyesi | MSL1 (unlimited floor life) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 55 V |
| Continuous Drain Current (I_D) at Tc | — | 89 A |
| Pulsed Dræn Akımı | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (P_D) at Tc | — | 170 W |
| On-Resistance R_DS(on) | — | 10 mOhm (typical, V_GS = 5 V) |
| Gate Threshold V_GS(th) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Q_g | — | 65.3 nC |
| Maximum Junction Temperature | — | 175 C |
| Gate Drive Level | — | Logic-level |
| Avalanche Rated | — | Yes (ruggedized single-pulse avalanche) |
| Lead-Free (PBF suffix) | — | Yes |