IRFB7534PBF vs IRL3705NPBF 比較

詳細並排比較 IRFB7534PBF 由 Infineon 與 IRL3705NPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRFB7534PBF IRL3705NPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Part Number IRFB7534PBF —
Technology StrongIRFET™ (planar N-channel) HEXFET (planar cell, fifth generation)
電晶體類型 N-Channel MOSFET —
Drain-Source Voltage (VDS) max 60 V —
Continuous Drain Current (ID) at Tc=25C 195 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Power Dissipation (PD) at Tc=25C 294 W —
On-Resistance RDS(on) max at VGS=10V 2.4 mOhm —
Gate Threshold Voltage VGS(th) 3.7 V (typ) —
Gate Charge Qg [DATA_NEEDED: total gate charge] —
Avalanche Energy Rated Yes —
封裝 TO-220AB TO-220AB (3-pin through-hole)
安裝類型 Through Hole Through Hole
工作溫度範圍 -55C to +175C —
RoHS 狀態 Compliant (PbF suffix) Compliant (per PBF suffix)
MSL 等級 MSL1 (unlimited floor life) —
FET Type — N-Channel
Drain-Source Voltage (V_DS) — 55 V
Continuous Drain Current (I_D) at Tc — 89 A
脈衝汲極電流 — [DATA_NEEDED: pulsed drain current]
Power Dissipation (P_D) at Tc — 170 W
On-Resistance R_DS(on) — 10 mOhm (typical, V_GS = 5 V)
Gate Threshold V_GS(th) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge Q_g — 65.3 nC
Maximum Junction Temperature — 175 C
Gate Drive Level — Logic-level
Avalanche Rated — Yes (ruggedized single-pulse avalanche)
Lead-Free (PBF suffix) — Yes

資料表與資源

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