IRFZ34NPBF vs IRFZ48NSTRLPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRFZ34NPBF tarafından Infineon ve IRFZ48NSTRLPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRFZ34NPBF | IRFZ48NSTRLPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Status | Active | — |
| FET Type | N-Channel, Enhancement Mode | N-Channel Power MOSFET |
| Technology | HEXFET (Planar DMOS, 5th generation) | — |
| Drain-Source Voltage (V_DSS) | 55 V | — |
| Continuous Drain Current (I_D) at Tc=25C | 29 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (P_D) at Tc=25C | 68 W | — |
| On-Resistance R_DS(on) max at V_GS=10V | 40 mOhm | — |
| Gate Charge (Q_g) typ | 22.7 nC | — |
| Gate Threshold Voltage V_GS(th) typ | [DATA_NEEDED: gate threshold voltage] | — |
| Input Capacitance (C_iss) typ | [DATA_NEEDED: input capacitance] | — |
| İşletim Sıcaklığı Aralığı | -55 C to +175 C | — |
| Maximum Junction Temperature | 175 C | — |
| Paket | TO-220AB (3-pin + tab, through-hole) | D2PAK (TO-263) Surface Mount |
| Montaj Türü | Through Hole | Surface Mount |
| Lead-Free Status | Yes (Pb-free, RoHS compliant) | — |
| Qualification | JEDEC standard | — |
| RoHS Durumu | Compliant | Compliant |
| Configuration | Single N-Channel, 3-pin (3+tab) | — |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) @ Tc=25C | — | 64 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-to-Source On-Resistance (Rds(on)) | — | 14 mΩ at VGS = 10 V |
| Gate-to-Source Threshold Voltage (VGS(th)) | — | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | — | 54 nC |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Power Dissipation (Pd) @ Tc=25C | — | 130 W |
| Power Dissipation (Pd) @ Ta=25C on FR-4 | — | 3.8 W |
| İşletim Jant Sıcaklığı | — | -55C to +175C |
| Packaging | — | Tape & Reel (13-inch reel, TRL) |
| Lead Finish | — | Lead-free (PBF) matte tin |
| Technology Family | — | HEXFET advanced process technology |