K9DVGY8J5M vs K9HQGY8S5M Karşılaştırma

Ayrıntılı yan yana karşılaştırma K9DVGY8J5M tarafından Samsung Electronics ve K9HQGY8S5M tarafından Samsung ElectronicsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Samsung Electronics
K9DVGY8J5M K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M ✓ Aktif
Samsung Electronics
K9HQGY8S5M K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage

K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage

K9HQGY8S5M ✓ Aktif

Özellik Karşılaştırması

Parametre K9DVGY8J5M K9HQGY8S5M
Marka Samsung Electronics Samsung Electronics
Kategori Memory ICs Memory ICs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer Samsung Electronics Samsung Electronics
Product Type Raw NAND Flash Memory 3D V-NAND Flash Memory (stacked, client NAND)
NAND Technology Samsung V-NAND (3D TLC) 32-layer pMLC 3D V-NAND (per Samsung 850 Pro 256 GB analysis)
Flash ID EC519A3F8CCB —
Density [DATA_NEEDED: die density (Gb)] [DATA_NEEDED: total bit density]
Organization (Page/Block) [DATA_NEEDED: page and block organization] —
Arayüz Türü [DATA_NEEDED: interface (toggle DDR / async)] —
Supply Voltage (VCC) [DATA_NEEDED: VCC voltage] —
Supply Voltage (VCCQ) [DATA_NEEDED: VCCQ voltage] —
Program Page Time (tPROG) [DATA_NEEDED: tPROG typical/us] —
Block Erase Time (tBERS) [DATA_NEEDED: tBERS typical/us] —
Read Time (tR) [DATA_NEEDED: tR typical/us] —
Program/Erase Endurance [DATA_NEEDED: P/E cycle endurance] —
İşletim Sıcaklığı [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Package Type [DATA_NEEDED: package type and dimensions] 316-ball Fine Pitch BGA (FBGA-316)
Montaj Türü Surface Mount Surface Mount (BGA)
RoHS Durumu [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Die Configuration — 4 x K9ADGD8S0A V-NAND dies (per TechInsights package analysis)
Memory Class — Non-volatile NAND flash
Arayüz — NAND (ONFI/Toggle-style asynchronous interface) - exact timing mode [DATA_NEEDED: interface timing mode]
Besleme Gerilimi — [DATA_NEEDED: VCC range]
Page Size — [DATA_NEEDED: page size]
Block Size — [DATA_NEEDED: block size]
Program/Erase Cycles — [DATA_NEEDED: P/E endurance rating]
MSL Seviyesi — [DATA_NEEDED: moisture sensitivity level]
Original Application — Samsung SSD 850 Pro solid-state drive

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