K9FGGY8J5A-BCK0 vs K9DVGY8J5M Karşılaştırma

Ayrıntılı yan yana karşılaştırma K9FGGY8J5A-BCK0 tarafından Samsung Electronics ve K9DVGY8J5M tarafından Samsung ElectronicsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Samsung Electronics
K9FGGY8J5A-BCK0 K9FGGY8J5A-BCK0 - Samsung V-NAND Flash Memory | Samsung Electronics

K9FGGY8J5A-BCK0 - Samsung V-NAND Flash Memory | Samsung Electronics

K9FGGY8J5A-BCK0 ✓ Aktif
Samsung Electronics
K9DVGY8J5M K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M ✓ Aktif

Özellik Karşılaştırması

Parametre K9FGGY8J5A-BCK0 K9DVGY8J5M
Marka Samsung Electronics Samsung Electronics
Kategori Memory ICs Memory ICs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer Samsung Electronics Samsung Electronics
Product Family K9 Series NAND Flash —
Technology 3D V-NAND —
Bellek Türü NAND Flash (non-volatile) —
Density [DATA_NEEDED: density] [DATA_NEEDED: die density (Gb)]
Organizasyon [DATA_NEEDED: organization] —
Cell Type [DATA_NEEDED: cell type TLC/MLC] —
Supply Voltage VCC [DATA_NEEDED: supply voltage] —
VCCQ Voltage [DATA_NEEDED: VCCQ] —
Arayüz [DATA_NEEDED: interface type/toggle mode] —
Page Size [DATA_NEEDED: page size] —
Block Size [DATA_NEEDED: block size] —
Paket [DATA_NEEDED: package and ball count] —
İşletim Sıcaklığı [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Montaj Türü Surface Mount Surface Mount
Speed Grade Suffix BCK0 —
RoHS Durumu [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
MSL Seviyesi [DATA_NEEDED: MSL level] —
Product Type — Raw NAND Flash Memory
NAND Technology — Samsung V-NAND (3D TLC)
Flash ID — EC519A3F8CCB
Organization (Page/Block) — [DATA_NEEDED: page and block organization]
Arayüz Türü — [DATA_NEEDED: interface (toggle DDR / async)]
Supply Voltage (VCC) — [DATA_NEEDED: VCC voltage]
Supply Voltage (VCCQ) — [DATA_NEEDED: VCCQ voltage]
Program Page Time (tPROG) — [DATA_NEEDED: tPROG typical/us]
Block Erase Time (tBERS) — [DATA_NEEDED: tBERS typical/us]
Read Time (tR) — [DATA_NEEDED: tR typical/us]
Program/Erase Endurance — [DATA_NEEDED: P/E cycle endurance]
Package Type — [DATA_NEEDED: package type and dimensions]

Dökümanlar & Kaynaklar

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