K9PRGY8S7M-CCK0 vs K9PKGY8S7M-CCK0 Karşılaştırma
Ayrıntılı yan yana karşılaştırma K9PRGY8S7M-CCK0 tarafından Samsung Electronics ve K9PKGY8S7M-CCK0 tarafından Samsung ElectronicsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Samsung Electronics
K9PRGY8S7M-CCK0 - Samsung NAND Flash Memory BGA | Samsung
K9PRGY8S7M-CCK0 ✓ Aktif
Özellik Karşılaştırması
| Parametre | K9PRGY8S7M-CCK0 | K9PKGY8S7M-CCK0 |
|---|---|---|
| Marka | Samsung Electronics | Samsung Electronics |
| Kategori | EEPROM | Memory ICs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Bellek Türü | NAND Flash | NAND Flash |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Paket | BGA (surface mount) | BGA |
| Montaj Türü | Surface Mount | Surface Mount |
| RoHS Durumu | Lead free / RoHS compliant | Lead free / RoHS compliant |
| Density | [DATA_NEEDED: density] | — |
| Memory Bus Width | [DATA_NEEDED: bus width] | — |
| Besleme Gerilimi | [DATA_NEEDED: supply voltage] | [DATA_NEEDED: supply voltage] |
| Arayüz | [DATA_NEEDED: interface type] | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| İşletim Sıcaklığı | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Program/Erase Cycles | [DATA_NEEDED: P/E cycle endurance] | [DATA_NEEDED: P/E cycle endurance] |
| MSL Seviyesi | [DATA_NEEDED: moisture sensitivity level] | — |
| Package Ball Count | [DATA_NEEDED: BGA ball count] | — |
| Memory Capacity | — | 128 Gb (16 GB) |
| Cell Architecture | — | 3D V-NAND, MLC (2 bits/cell) |
| V-NAND Layers | — | 24 layers |
| Application Domain | — | Enterprise SSD (e.g., Samsung 845DC Pro) |
| Access Time (tR) | — | [DATA_NEEDED: read cycle time] |
| Data Retention | — | [DATA_NEEDED: retention specification] |