MRF6S9130HSR3 vs MRFE6S9160HR3 Karşılaştırma
Ayrıntılı yan yana karşılaştırma MRF6S9130HSR3 tarafından NXP Semiconductors ve MRFE6S9160HR3 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
NXP Semiconductors
MRF6S9130HSR3 - 27W 880MHz RF Power MOSFET | NXP Semiconductors
MRF6S9130HSR3 ✓ AktifÖzellik Karşılaştırması
| Parametre | MRF6S9130HSR3 | MRFE6S9160HR3 |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors |
| Part Status | Active | — |
| Transistor Türü | Lateral N-Channel RF Power MOSFET (LDMOS) | N-Channel Enhancement-Mode Lateral MOSFET |
| Operating Frequency | 880 MHz | — |
| Drain-Source Voltage (Vdss) Max | 68 V | — |
| Drain Current (Id) Max | [DATA_NEEDED: maximum pulsed drain current] | — |
| Typical Quiescent Current (Idq) | 950 mA | — |
| Drain-Source On Resistance (Rds(on)) | [DATA_NEEDED: Rds(on) value] | — |
| Output Power (Pout) Avg | 27 W (N-CDMA single-carrier) | — |
| Power Gain (Gps) | 19.2 dB typical | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency figure] | 32.4% (typical, N-CDMA, 880 MHz) |
| Supply Voltage (Vdd) Recommended | 28 V | — |
| Paket / Kas | NI-780S (CASE 465-06, Style 1) ceramic flange | NI-780H-2L (ceramic/metal air-cavity flange-mount) |
| Montaj Türü | Chassis / flange mount with screw-down | Chassis / Flange mount (through-hole RF leads) |
| İşletim Sıcaklığı Aralığı | [DATA_NEEDED: Tj operating range] | -40C to +150C (junction) |
| Storage Temperature Range | [DATA_NEEDED: Tstg range] | — |
| Pin Sayısı | 3 | — |
| Style | Style 1 | — |
| Technology | LDMOS (laterally diffused MOS) | HV6E lateral MOSFET (LDMOS-like) |
| RoHS Durumu | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Packing | Tape & Reel (HSR3 suffix) | — |
| Primary Applications | N-CDMA, GSM, GSM EDGE base station PAs, 880-960 MHz multicarrier amplifiers | — |
| Drain-Source Voltage (V DSS) | — | 70 V (max) |
| Drain Current (continuous) | — | [DATA_NEEDED: typical drain current at TC=25C] |
| Operating Frequency Range | — | 865 MHz to 960 MHz |
| Test Frequency | — | 880 MHz |
| Drain Supply Voltage (V DD) | — | 28 V (typical) |
| Output Power (Average) | — | 35 W (single-carrier N-CDMA, 880 MHz) |
| Output Power (PEP) | — | [DATA_NEEDED: PEP at specified conditions] |
| Power Gain (G ps / G p) | — | 21 dB (typical at 880 MHz) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Thermal Resistance (R thJC) | — | [DATA_NEEDED: thermal resistance junction-to-case] |
| Input Match | — | Internally matched input (broadband) |
| MSL Seviyesi | — | Not applicable (non-SMD air-cavity package) |