MRF6S9130HSR3 vs MRFE6S9160HR3 موازنہ
تفصیلی ساتھ ساتھ موازنہ از MRF6S9130HSR3 بذریعہ NXP Semiconductors اور MRFE6S9160HR3 بذریعہ NXP Semiconductors. اہم خصوصیات، برقی پیرامیٹرز، پیکیجنگ، لائف سائیکل اسٹیٹس، قیمتوں اور دستیابی کا موازنہ کریں تاکہ آپ کی ڈیزائن ضروریات کے لیے بہترین کمپوننٹ کا تعین ہو سکے۔
NXP Semiconductors
MRF6S9130HSR3 - 27W 880MHz RF Power MOSFET | NXP Semiconductors
MRF6S9130HSR3 ✓ فعالخصوصیات کا موازنہ
| پیرامیٹر | MRF6S9130HSR3 | MRFE6S9160HR3 |
|---|---|---|
| برانڈ | NXP Semiconductors | NXP Semiconductors |
| زمرہ | MOSFETs | MOSFETs |
| لائف سائیکل کی حالت | فعال | فعال |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors |
| Part Status | Active | — |
| ٹرانزسٹر کی قسم | Lateral N-Channel RF Power MOSFET (LDMOS) | N-Channel Enhancement-Mode Lateral MOSFET |
| Operating Frequency | 880 MHz | — |
| Drain-Source Voltage (Vdss) Max | 68 V | — |
| Drain Current (Id) Max | [DATA_NEEDED: maximum pulsed drain current] | — |
| Typical Quiescent Current (Idq) | 950 mA | — |
| Drain-Source On Resistance (Rds(on)) | [DATA_NEEDED: Rds(on) value] | — |
| Output Power (Pout) Avg | 27 W (N-CDMA single-carrier) | — |
| Power Gain (Gps) | 19.2 dB typical | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency figure] | 32.4% (typical, N-CDMA, 880 MHz) |
| Supply Voltage (Vdd) Recommended | 28 V | — |
| پیکیج / کیس | NI-780S (CASE 465-06, Style 1) ceramic flange | NI-780H-2L (ceramic/metal air-cavity flange-mount) |
| ماؤنٹنگ ٹائپ | Chassis / flange mount with screw-down | Chassis / Flange mount (through-hole RF leads) |
| آپریٹنگ درجہ حرارت رینج | [DATA_NEEDED: Tj operating range] | -40C to +150C (junction) |
| Storage Temperature Range | [DATA_NEEDED: Tstg range] | — |
| پن کی تعداد | 3 | — |
| Style | Style 1 | — |
| Technology | LDMOS (laterally diffused MOS) | HV6E lateral MOSFET (LDMOS-like) |
| RoHS اسٹیٹس | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Packing | Tape & Reel (HSR3 suffix) | — |
| Primary Applications | N-CDMA, GSM, GSM EDGE base station PAs, 880-960 MHz multicarrier amplifiers | — |
| Drain-Source Voltage (V DSS) | — | 70 V (max) |
| Drain Current (continuous) | — | [DATA_NEEDED: typical drain current at TC=25C] |
| Operating Frequency Range | — | 865 MHz to 960 MHz |
| Test Frequency | — | 880 MHz |
| Drain Supply Voltage (V DD) | — | 28 V (typical) |
| Output Power (Average) | — | 35 W (single-carrier N-CDMA, 880 MHz) |
| Output Power (PEP) | — | [DATA_NEEDED: PEP at specified conditions] |
| Power Gain (G ps / G p) | — | 21 dB (typical at 880 MHz) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Thermal Resistance (R thJC) | — | [DATA_NEEDED: thermal resistance junction-to-case] |
| Input Match | — | Internally matched input (broadband) |
| MSL لیول | — | Not applicable (non-SMD air-cavity package) |