IRLB3813PBF - 30V, 260A StrongIRFET N-MOSFET | Infineon | TO-220AB
MPN: IRLB3813PBF ✓ فعالIRLB3813PBF جائزہ
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used for switching and amplifying signals in power electronics. Within the broader taxonomy, MOSFETs belong to discrete semiconductors -> transistors -> field-effect transistors -> power switches. The N-channel enhancement mode variant IRLB3813PBF conducts when a positive gate-to-source voltage is applied and blocks current when VGS is below threshold. Its very low on-resistance minimises conduction losses in high-current DC paths, making it the preferred switch for synchronous rectification, motor drive, and high-current load switching.
Key differentiating specifications include an ultra-low RDS(on) of 1.95 mOhm at 10 V VGS, 57 nC typical total gate charge (Qg), and an avalanche-rated single-pulse current capability. Logic-level gate drive (full enhancement at VGS = 4.5 V) allows direct control from 5 V microcontrollers or gate-driver ICs without bootstrap charge pumps. The HEXFET cell structure gives a robust body diode and characterised avalanche energy, simplifying design in hard-switched bridge topologies.
The IRLB3813PBF uses Infineon's StrongIRFET planar cell technology, optimised for lowest conduction loss at industrial-grade switching frequencies (typically 20-100 kHz). Compared to the older IRF540N-family generation, the IRLB3813 offers roughly 5x lower on-resistance in the same TO-220AB footprint, reducing heatsink requirements in battery protection, UPS, and high-current hot-swap applications.
Typical applications include UPS and inverter bridges, 12 V and 24 V bus hot-swap switches, high-frequency isolated DC-DC converters with synchronous rectification, battery protection and BMS discharge FETs, power tool motor drives, and industrial solenoids/relay replacement.
When designing with this part, place a 10 kOhm gate-to-source pull-down resistor to prevent unintended turn-on from dv/dt-induced Miller coupling. Verify SOA at the operating VDS and pulse duration; planar StrongIRFET cells are robust but thermal limits at 230 W (Tc) require careful heatsink selection at continuous high current.
This page synthesises distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
کے لیے ڈراپ اِن متبادل IRLB3813PBF — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IRLB3813PBF (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Technology, Mounting Type, Package, Drain-Source Voltage (VDS), On-Resistance RDS(on) max at VGS=10V.
IRLB3813PBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRF1405PBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRFR4615TRLPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRLB3813PBF زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| FET Type | N-Channel |
| Technology | StrongIRFET (HEXFET) |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at Tc=25C | 260 A |
| On-Resistance RDS(on) max at VGS=10V | 1.95 mOhm |
| Total Gate Charge (Qg) | 57 nC (typical, per Mouser snippet) |
| Power Dissipation (PD) at Tc=25C | 230 W |
| پیکیج | TO-220AB (through-hole) |
| ماؤنٹنگ ٹائپ | Through Hole |
| Gate Drive Level | Logic-level (fully enhanced at 4.5 V VGS) |
| Avalanche Rated | Yes (per datasheet: fully characterised avalanche voltage and current) |
| Qualification Standard | JEDEC (industrial market) |
| RoHS اسٹیٹس | Compliant (Pb-free suffix PBF) |
| Lead-Free | Yes |
IRLB3813PBF پن کنفیگریشن
| پن 1 | Gate — MOSFET gate drive input (logic-level, fully enhanced at VGS=4.5V) |
| پن 2 | Drain — MOSFET drain; also electrically connected to the metal tab/back of the package |
| پن 3 | Source — MOSFET source; reference for gate drive and load return |
محفوظ آپریٹنگ ایریا (DC, Tj=175C, VGS=10V)
عام استعمالات
IRLB3813PBF کے لیے موزوں ہے 6 ایپلیکیشنs: UPS and Inverter Bridge Switch, 12 V / 24 V Battery Protection (BMS Discharge FET), High-Frequency Isolated DC-DC Converter (Synchronous Rectifier), Hot-Swap / E-Fuse for 12 V and 24 V Distribution, Power Tool Motor Drive (Low-Side Switch), Industrial Solenoid and Relay Replacement.
UPS and Inverter Bridge Switch
The IRLB3813PBF fits UPS and inverter full-bridge legs because of its 30 V VDS rating (well above a 24 V bus peak) and 260 A continuous drain current at Tc=25C, allowing it to handle 5-10 kVA inverter outputs with adequate margin. The 1.95 mOhm RDS(on) minimises conduction loss in 50/60 Hz rectified paths, while logic-level gate drive lets a simple bootstrap gate driver (e.g., IR2114SSPBF) control it directly from 5 V logic. Compared to an IGBT at this voltage/current, the IRLB3813PBF has lower conduction loss but lacks the IGBT's square SOA - so it is best used on the low-side or in totem-pole pairs where VDS stays under 30 V.
تجویز کردہ
12 V / 24 V Battery Protection (BMS Discharge FET)
The IRLB3813PBF is well-matched to battery management system discharge paths because its 30 V VDS rating comfortably covers a fully-charged 24 V Li-ion pack (~29.4 V), and its 1.95 mOhm RDS(on) keeps voltage drop under 100 mV at 50 A continuous discharge. Logic-level gate drive (full enhancement at 4.5 V) lets a 3.3 V or 5 V BMS microcontroller drive it through a small gate resistor. Its avalanche rating also handles the inductive kick from motor loads connected to the pack. Engineers should size the heatsink for steady-state discharge (P = I^2 * R = 50^2 * 0.002 = 5 W) and add a 10 kOhm gate pull-down for fail-safe OFF state.
تجویز کردہ
High-Frequency Isolated DC-DC Converter (Synchronous Rectifier)
The IRLB3813PBF serves as a synchronous rectifier on the secondary side of 12 V or 24 V-input isolated DC-DC converters because its 1.95 mOhm RDS(on) at VGS=4.5V outperforms Schottky diodes above 30 A load, eliminating reverse-recovery loss and improving efficiency by 2-4 percentage points. The 57 nC Qg keeps gate-drive loss manageable at 100-200 kHz switching frequency. Its planar StrongIRFET cell has a robust body diode, simplifying dead-time control. The TO-220AB package allows through-hole mounting on the secondary-side copper pour for thermal spreading, and matches well with a primary-side switch such as the IPB025N10N3GATMA1 for a complete 48 V to 12 V telecom砖 converter.
تجویز کردہ
Hot-Swap / E-Fuse for 12 V and 24 V Distribution
The IRLB3813PBF fits 12 V and 24 V hot-swap and electronic fuse paths because its 30 V VDS rating accommodates the full bus voltage plus transient ringing, and its 260 A ID capability supports high-inrush capacitive loads up to 10 mF on the backplane. Logic-level gate drive enables inrush control via a microcontroller PWM ramp, while the 1.95 mOhm RDS(on) keeps steady-state drop below 50 mV at 25 A. Its avalanche rating absorbs the energy from a load short during current-limit foldback. Pair with a current-sense amplifier (e.g., INA180) and gate resistor to build a complete e-fuse; the TO-220AB package gives a low-resistance tab for heatsink mounting during continuous high-current events.
تجویز کردہ
Power Tool Motor Drive (Low-Side Switch)
The IRLB3813PBF is used as a low-side switch in cordless power tool motor drives because its 30 V VDS rating suits 18 V and 20 V battery packs with margin, and its 1.95 mOhm RDS(on) at logic-level gate drive (4.5 V) lets it be controlled directly from a 5 V gate-driver IC without charge-pump complexity. The 260 A peak current handles motor stall transients, while the 230 W power dissipation rating supports continuous operation with a moderate heatsink. Its robust body diode supports PWM braking at 20-30 kHz. Compared to Darlington or IGBT alternatives, the StrongIRFET has faster switching and lower conduction loss, improving runtime by 5-10% on the same battery.
تجویز کردہ
Industrial Solenoid and Relay Replacement
The IRLB3813PBF replaces mechanical relays in industrial solenoid drivers because of its 260 A peak rating, 1.95 mOhm on-resistance, and logic-level gate drive that interfaces directly with 5 V PLC outputs or microcontroller GPIO. Unlike mechanical relays, it has no moving contacts, enabling silent operation, faster switching (<1 us vs 10 ms), and bounce-free PWM control for proportional solenoid actuation. The TO-220AB through-hole package supports rugged mounting in industrial control cabinets. Pair with a TVS diode (e.g., SMBJ5.0A) across the solenoid coil to clamp inductive flyback within the 30 V VDS rating. Useful in 24 V hydraulic valve control and factory automation where mechanical relay寿命 (10^5 cycles) is a limiting factor.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IRLB3813PBF — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IRF1405PBF | IRFR4615TRLPBF |
|---|---|---|---|
| Package | TO-220AB (through-hole) | TO-220AB (through-hole) - same | TO-252 / DPAK (SMD) - different |
| Brand | Infineon | Infineon | Infineon |
| VDS max | 30 V | 40 V (+33%) | 100 V (+233%) |
| ID max (Tc=25C) | 260 A | 169 A (-35%) | 37 A (-86%) |
| RDS(on) max @ VGS=10V | 1.95 mOhm | 5.3 mOhm (+172%) | 30 mOhm (+1438%) |
| Power Dissipation (Tc=25C) | 230 W | 330 W | 140 W |
| Gate Drive Level | Logic-level (4.5 V VGS full enhancement) | Standard (10 V VGS) | Standard (10 V VGS) |
| Technology | StrongIRFET planar HEXFET | HEXFET planar | HEXFET planar |
اہم امتیازی خصوصیات
- Lowest on-resistance at logic-level gate drive in TO-220AB (بمقابلہIRF1405PBF)
- 260 A continuous current rating - 3x the IRFR4615TRLPBF DPAK class (بمقابلہIRFR4615TRLPBF)
- Logic-level gate drive eliminates charge-pump circuitry (بمقابلہIRF1405PBF)
ڈیزائن نوٹس
Estimated: at continuous 50 A load, conduction loss is P = I^2 * R = 50^2 * 0.00195 = 4.875 W. With TO-220AB junction-to-ambient thermal resistance typically 62 C/W without heatsink, junction temperature rise above 25C ambient is 4.875 * 62 = 302 C - far exceeding the 175 C max. A heatsink with thermal resistance < 1 C/W (e.g., 50 mm extruded aluminium) is mandatory for sustained >30 A operation. Forced-air cooling (100 LFM) cuts the required heatsink size by roughly 50%.
For through-hole TO-220AB mounting, use a 6 mm or larger pad with 2 oz copper pour connected to the Source pin (pin 3) to spread heat and reduce source-inductance-induced ringing. Mount the tab to a heatsink using a silicone insulator pad (e.g., Bergquist Sil-Pad) and thermal compound if the heatsink is grounded. Never rely on the drain tab for electrical connection without isolating it, as Pin 2 (Drain) and the tab are internally bonded.
Place a 10 kOhm gate-to-source resistor directly across the gate and source pins (physically close to the package) to prevent dv/dt-induced Miller turn-on in bridge topologies. Exceeding VGS = +/-20 V (the absolute maximum gate voltage) destroys the gate oxide - add a 12 V Zener (e.g., BZX84C12L) from gate to source if the gate driver can overshoot. Do not use the IRLB3813PBF on a 48 V bus; the 30 V VDS rating leaves no transient margin.
Keep the gate-drive loop (gate-driver output -> gate resistor -> gate pin -> source pin -> gate-driver ground return) area under 1 cm^2 to minimise parasitic inductance, which otherwise causes gate-voltage ringing and potential shoot-through in half-bridge configurations. Source inductance from the package source pin back to the power-ground plane is the dominant cause of switching loss and EMI - use a Kelvin-source connection (pin 3 directly to the gate-driver ground) when available in the layout.
تعمیل کی معلومات
PBF suffix denotes Pb-free / RoHS-compliant per Infineon part-numbering convention. Not AEC-Q100 qualified - the part targets industrial market per the datasheet qualification statement. For automotive applications, choose an AEC-Q100-qualified OptiMOS or StrongIRFET variant instead.
